Titlebook: Nanolithography; A Borderland between M. Gentili,C. Giovannella,S. Selci Book 1994 Springer Science+Business Media Dordrecht 1994 AES.PAS.P

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書(shū)目名稱Nanolithography影響因子(影響力)




書(shū)目名稱Nanolithography影響因子(影響力)學(xué)科排名




書(shū)目名稱Nanolithography網(wǎng)絡(luò)公開(kāi)度




書(shū)目名稱Nanolithography網(wǎng)絡(luò)公開(kāi)度學(xué)科排名




書(shū)目名稱Nanolithography被引頻次




書(shū)目名稱Nanolithography被引頻次學(xué)科排名




書(shū)目名稱Nanolithography年度引用




書(shū)目名稱Nanolithography年度引用學(xué)科排名




書(shū)目名稱Nanolithography讀者反饋




書(shū)目名稱Nanolithography讀者反饋學(xué)科排名

Matrimony

吞噬

Nanolithography Developed Through Electron-Beam-Induced Surface Reactioncrylate (PMMA) resist patterns and 14 nm diameter carbon dot patterns have been demonstrated by 50 kV scanning electron microscope (SEM)-EBISED. A tungsten rod pattern with 15 nm diameter and carbon dot patterns with 10 nm diameters have been fabricated by scanning transmission microscope (STEM)-EBI

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LURE

Sub-10nm Electron Beam Lithography: -AIF3-Doped Lithium Fluoride as a Resisted a variety of quantum effects such as Aharonov-Bohm oscillations [1], universal conductance fluctuations [2], persistent currents [3], single-electron effects [4], etc. In any case, these phenomena are only detectable at sufficiently low temperatures in the Kelvin range or below. Especially for me

揮舞

吹氣

Fabrication of Ultrasmall InGaAs/InP Nanostructures by High Voltage Electron Beam Lithography and Wehe wires down to 16 nm have been achieved. The wires show strong photoluminescence emission even for geometrical widths less than 20 nm and without overgrowth. The weak decrease of the quantum efficiency with decreasing wire width indicates that there is no significant damage at the sidewalls of the

cravat

Fabrication, investigation and manipulation of artificial nanostructures the improvement of the fabrication technology for the future use of these low-dimensional structures in optoelectronic devices has emerged growing interest over the past few years. The use of high resolution electron beam lithography is a very variable, direct technological approach for the fabrica

CUR

Nano-Lithography in 3 Dimensions with Electron Beam Induced Depositiona very fine electron beam in a dedicated field emission scanning electron microscope renders nanometer size deposits which extend from surfaces to heights in the micrometer range. Having an image processor attached to the microscope gives the capability to control the two- and three-dimensional depo

艦旗

Nanolithography Requirements — An Equipment Manufacturers Viewg technique. The many diverse system component technologies which combine to provide EBL as we know it, have been well researched and developed for the more industrially based microlithography field. Fortunately most of these important component techniques can be scaled downwards, at least over the