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Titlebook: Nanolithography; A Borderland between M. Gentili,C. Giovannella,S. Selci Book 1994 Springer Science+Business Media Dordrecht 1994 AES.PAS.P

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樓主: advocate
41#
發(fā)表于 2025-3-28 16:12:42 | 只看該作者
0168-132X one beinglithography. ..Nanolithography. contains updated reviews by major experts on thewell established techniques -- electron beam lithography (EBL), X-raylithography (XRL), ion beam lithography (IBL) -- as well as onemergent techniques, such as scanning tunnelling lithography (STL)..978-90-481-4388-7978-94-015-8261-2Series ISSN 0168-132X
42#
發(fā)表于 2025-3-28 21:25:27 | 只看該作者
Sub-10nm Electron Beam Lithography: -AIF3-Doped Lithium Fluoride as a Resiston effects [4], etc. In any case, these phenomena are only detectable at sufficiently low temperatures in the Kelvin range or below. Especially for metallic systems, we could turn to higher temperatures — and this is a key issue for possible applications — if the minimum lateral dimensions of these devices can be shrinked down to ? 10m.
43#
發(fā)表于 2025-3-29 03:00:05 | 只看該作者
Patterning of InGaAs/GaAs Quantum Dots Using E-Beam Lithography and Selective Removal of the Top Barion energy of a quantum well covered with GaAs as a barrier and a vacuum barrier potential wen. Dot structures of widths down to 25 nm in size have been generated. We observe high luminescence intensites even from small structures as well as a blueshift of up to 9 meV for 25 nm quantum dots.
44#
發(fā)表于 2025-3-29 05:22:06 | 只看該作者
45#
發(fā)表于 2025-3-29 09:26:24 | 只看該作者
46#
發(fā)表于 2025-3-29 13:15:00 | 只看該作者
Latest Results Obtained with the Alpha Ion Projection Machinethout moving mechanical parts with nanometer precision. Due to the negligible scattering of ions in comparison to electrons there is no need for proximity corrections..Recent results obtained with the advanced research type “Alpha Ion Projector” are:
47#
發(fā)表于 2025-3-29 18:51:52 | 只看該作者
0168-132X uantum phenomena in confined boxes, wires, rings, etc. Anew class of electronic devices based on this physics has beenproposed, with the promise of a new functionality for ultrafast and/orultradense electronic circuits. Such applications demand highlysophisticated fabrication techniques, the crucial
48#
發(fā)表于 2025-3-29 22:35:38 | 只看該作者
49#
發(fā)表于 2025-3-30 03:24:34 | 只看該作者
Fabrication of X-ray mask for nanolithography by EBLnte Carlo simulation (MC) allowed the study of the scattering processes (and thus the energy deposition mechanism) occurring in the resist. In particular, the contributes from the forward and from the backscattering, could be separately computed. Dense and reproducible 65 nm gold line-width resoluti
50#
發(fā)表于 2025-3-30 07:53:28 | 只看該作者
Xiaodan Pan,A. N. Broersertounexpected, ways. This book challenges everything we thought we knew aboutblindness and invites us to revel in the pleasures and perils of readingblind.. .?.978-1-137-43511-8Series ISSN 2947-7409 Series E-ISSN 2947-7417
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