Titlebook: Dry Etching Technology for Semiconductors; Kazuo Nojiri Book 2015 Springer International Publishing Switzerland 2015 3D Integrated Circuit

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Mechanism of Dry Etching,ining the reaction processes. For that, one must first understand the mechanism of dry etching. This chapter starts with the basics of plasma and goes on to describe the dry etching reaction processes and the mechanism of anisotropic etching without relying on mathematical equations or difficult the

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Dry Etching of Various Materials,be categorized into (1) etching of Si, (2) etching of insulators, and (3) etching of metal line materials. In this chapter, the key technologies in each category—which are gate etching, SiO. etching for holes, spacer etching, and etching of Al alloy stacked metal layer structures—are described in de

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Dry Etching Equipment,lasma density, operating pressure conditions, and key characteristics of dry etching equipment used in LSI manufacturing today, including the barrel-type plasma etcher, capacitively coupled plasma (CCP) etcher, magnetron reactive-ion etching (RIE), electron-cyclotron resonance (ECR) plasma etcher, a

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Book 2015 and gas chemistry are used for the etching of each material, and how to develop etching processes.?The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning etc.

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Islam, Europe, and the Problem of Peace/poly–Si gate. Once the reader understands these completely, then a similar approach may be followed for designing an etching process for shallow trench isolation (STI) and W metal lines. Also, with gate etching, there is a strong need not only to control the etch profile, but also to minimize the p

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