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Titlebook: Silicon Analog Components; Device Design, Proce Badih El-Kareh,Lou N. Hutter Book 20151st edition Springer Science+Business Media New York

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發(fā)表于 2025-3-21 19:23:52 | 只看該作者 |倒序瀏覽 |閱讀模式
書目名稱Silicon Analog Components
副標題Device Design, Proce
編輯Badih El-Kareh,Lou N. Hutter
視頻videohttp://file.papertrans.cn/868/867297/867297.mp4
概述Features include:.A review of silicon and junction properties.High-voltage devices, DE CMOS, LDMOS.Passive components: precisions resistors, capacitors, varactors, inductors.Component mismatch and noi
圖書封面Titlebook: Silicon Analog Components; Device Design, Proce Badih El-Kareh,Lou N. Hutter Book 20151st edition Springer Science+Business Media New York
描述.This book covers modern analog components, their characteristics, and interactions with process parameters. It serves as a comprehensive guide, addressing both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Based on the authors’ extensive experience in the development of analog devices, this book is intended for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science..
出版日期Book 20151st edition
關(guān)鍵詞BCD Processes and Devices; CMOS, BiCMOS Processes; Diodes, Transistors Book; El-Kareh Silicon Device De
版次1
doihttps://doi.org/10.1007/978-1-4939-2751-7
isbn_softcover978-1-4939-5398-1
isbn_ebook978-1-4939-2751-7
copyrightSpringer Science+Business Media New York 2015
The information of publication is updating

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沙發(fā)
發(fā)表于 2025-3-21 23:50:20 | 只看該作者
The World Is Analog,(digital). This chapter covers the diversity of analog applications and voltage requirements, and gives a high-level overview of the many process technologies and components that are encountered in the analog world.
板凳
發(fā)表于 2025-3-22 03:54:05 | 只看該作者
PN Junctions, is followed by a review of junction forward-bias characteristics under low-level and high-level injection, and reverse-bias characteristics under low- and high-field conditions. The junction switching behavior and reverse recovery time are then described, followed by examples of stand-alone junction applications.
地板
發(fā)表于 2025-3-22 05:13:01 | 只看該作者
5#
發(fā)表于 2025-3-22 12:45:22 | 只看該作者
Mismatch and Noise,art of this chapter discusses random and systematic mismatch in passive and active components, mismatch characterization, and process and design methods to reduce mismatch. The second part describes the different noise mechanisms, focusing on low-frequency noise and methods to reduce it.
6#
發(fā)表于 2025-3-22 14:30:09 | 只看該作者
Chip Reliability,ity is then presented. The sections include dielectric reliability, electro- and stress-migration, hot-carrier reliability, latch-up, bias-temperature instabilities, Joule heating and resistor reliability, high-voltage and high-power MOSFET reliability, plasma damage, and electrostatic discharge.
7#
發(fā)表于 2025-3-22 18:47:49 | 只看該作者
capacitors, varactors, inductors.Component mismatch and noi.This book covers modern analog components, their characteristics, and interactions with process parameters. It serves as a comprehensive guide, addressing both the theoretical and practical aspects of modern silicon devices and the relatio
8#
發(fā)表于 2025-3-22 23:16:24 | 只看該作者
Rectifying and Ohmic Contacts,ts resistance is becoming increasingly important as contact dimensions are reduced. The first part of this chapter discusses SBD properties, characterization, and applications. The second part describes the formation and characterization of ohmic contacts.
9#
發(fā)表于 2025-3-23 03:04:14 | 只看該作者
High-Voltage and Power Transistors,n analyzed, followed by a discussion of DEMOS and LDMOS design considerations and characteristics. High-voltage and high-current effects are then described, including quasi-saturation, body current, on-state breakdown, and safe operating area (SOA). The chapter concludes with selected high-voltage device applications.
10#
發(fā)表于 2025-3-23 07:19:04 | 只看該作者
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