Titlebook: Silicon Analog Components; Device Design, Proce Badih El-Kareh,Lou N. Hutter Book 20151st edition Springer Science+Business Media New York

Objective

書目名稱Silicon Analog Components影響因子(影響力)




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書目名稱Silicon Analog Components網(wǎng)絡(luò)公開度學科排名




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書目名稱Silicon Analog Components被引頻次學科排名




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性冷淡

The World Is Analog,(digital). This chapter covers the diversity of analog applications and voltage requirements, and gives a high-level overview of the many process technologies and components that are encountered in the analog world.

沖突

PN Junctions, is followed by a review of junction forward-bias characteristics under low-level and high-level injection, and reverse-bias characteristics under low- and high-field conditions. The junction switching behavior and reverse recovery time are then described, followed by examples of stand-alone junction applications.

CEDE

金哥占卜者

Mismatch and Noise,art of this chapter discusses random and systematic mismatch in passive and active components, mismatch characterization, and process and design methods to reduce mismatch. The second part describes the different noise mechanisms, focusing on low-frequency noise and methods to reduce it.

HALL

Chip Reliability,ity is then presented. The sections include dielectric reliability, electro- and stress-migration, hot-carrier reliability, latch-up, bias-temperature instabilities, Joule heating and resistor reliability, high-voltage and high-power MOSFET reliability, plasma damage, and electrostatic discharge.

uveitis

capacitors, varactors, inductors.Component mismatch and noi.This book covers modern analog components, their characteristics, and interactions with process parameters. It serves as a comprehensive guide, addressing both the theoretical and practical aspects of modern silicon devices and the relatio

Lignans

Rectifying and Ohmic Contacts,ts resistance is becoming increasingly important as contact dimensions are reduced. The first part of this chapter discusses SBD properties, characterization, and applications. The second part describes the formation and characterization of ohmic contacts.

certitude

High-Voltage and Power Transistors,n analyzed, followed by a discussion of DEMOS and LDMOS design considerations and characteristics. High-voltage and high-current effects are then described, including quasi-saturation, body current, on-state breakdown, and safe operating area (SOA). The chapter concludes with selected high-voltage device applications.

PANIC