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Titlebook: Silicon Analog Components; Device Design, Proce Badih El-Kareh,Lou N. Hutter Book 20151st edition Springer Science+Business Media New York

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發(fā)表于 2025-3-23 12:57:30 | 只看該作者
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發(fā)表于 2025-3-23 15:05:19 | 只看該作者
Bipolar and Junction Field-Effect Transistors,haracteristics that are relevant to analog applications. This is followed by a description of JFET types, basic operation, and characteristics. The chapter concludes with simple circuit applications of both transistors.
13#
發(fā)表于 2025-3-23 20:26:46 | 只看該作者
The World Is Analog,s essential in allowing the benefits of digital processing to be realized by providing the interface between the real world (analog) and the computer (digital). This chapter covers the diversity of analog applications and voltage requirements, and gives a high-level overview of the many process tech
14#
發(fā)表于 2025-3-24 01:05:36 | 只看該作者
Review of Single-Crystal Silicon Properties,se semiconductor properties that are most important to analog and digital silicon device operation and characteristics discussed in the following chapters. The chapter covers carrier concentrations and thermal-equilibrium statistics, carrier transport under low-and high-field conditions, and minorit
15#
發(fā)表于 2025-3-24 03:57:13 | 只看該作者
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發(fā)表于 2025-3-24 07:07:16 | 只看該作者
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發(fā)表于 2025-3-24 12:17:21 | 只看該作者
Bipolar and Junction Field-Effect Transistors,ntly use the component in Bipolar-CMOS (BiCMOS) applications. It is also important to understand bipolar effects in CMOS, such as subthreshold behavior, snapback, and latch-up, and to identify process and design techniques to modify their impact on circuit performance. Similarly, a discussion of int
18#
發(fā)表于 2025-3-24 18:47:35 | 只看該作者
19#
發(fā)表于 2025-3-24 19:29:33 | 只看該作者
High-Voltage and Power Transistors,ions. In both cases, the drain is extended with a lightly-doped region, referred to as the ., to sustain the high voltage. The chapter begins with an analysis of the drift region and its optimization, typically by reduced surface-field (RESURF) techniques. The transistor switching performance is the
20#
發(fā)表于 2025-3-25 02:06:08 | 只看該作者
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