找回密碼
 To register

QQ登錄

只需一步,快速開始

掃一掃,訪問微社區(qū)

打印 上一主題 下一主題

Titlebook: Silicon Analog Components; Device Design, Proce Badih El-Kareh,Lou N. Hutter Book 20151st edition Springer Science+Business Media New York

[復(fù)制鏈接]
樓主: Objective
11#
發(fā)表于 2025-3-23 12:57:30 | 只看該作者
12#
發(fā)表于 2025-3-23 15:05:19 | 只看該作者
Bipolar and Junction Field-Effect Transistors,haracteristics that are relevant to analog applications. This is followed by a description of JFET types, basic operation, and characteristics. The chapter concludes with simple circuit applications of both transistors.
13#
發(fā)表于 2025-3-23 20:26:46 | 只看該作者
The World Is Analog,s essential in allowing the benefits of digital processing to be realized by providing the interface between the real world (analog) and the computer (digital). This chapter covers the diversity of analog applications and voltage requirements, and gives a high-level overview of the many process tech
14#
發(fā)表于 2025-3-24 01:05:36 | 只看該作者
Review of Single-Crystal Silicon Properties,se semiconductor properties that are most important to analog and digital silicon device operation and characteristics discussed in the following chapters. The chapter covers carrier concentrations and thermal-equilibrium statistics, carrier transport under low-and high-field conditions, and minorit
15#
發(fā)表于 2025-3-24 03:57:13 | 只看該作者
16#
發(fā)表于 2025-3-24 07:07:16 | 只看該作者
17#
發(fā)表于 2025-3-24 12:17:21 | 只看該作者
Bipolar and Junction Field-Effect Transistors,ntly use the component in Bipolar-CMOS (BiCMOS) applications. It is also important to understand bipolar effects in CMOS, such as subthreshold behavior, snapback, and latch-up, and to identify process and design techniques to modify their impact on circuit performance. Similarly, a discussion of int
18#
發(fā)表于 2025-3-24 18:47:35 | 只看該作者
19#
發(fā)表于 2025-3-24 19:29:33 | 只看該作者
High-Voltage and Power Transistors,ions. In both cases, the drain is extended with a lightly-doped region, referred to as the ., to sustain the high voltage. The chapter begins with an analysis of the drift region and its optimization, typically by reduced surface-field (RESURF) techniques. The transistor switching performance is the
20#
發(fā)表于 2025-3-25 02:06:08 | 只看該作者
 關(guān)于派博傳思  派博傳思旗下網(wǎng)站  友情鏈接
派博傳思介紹 公司地理位置 論文服務(wù)流程 影響因子官網(wǎng) 吾愛論文網(wǎng) 大講堂 北京大學 Oxford Uni. Harvard Uni.
發(fā)展歷史沿革 期刊點評 投稿經(jīng)驗總結(jié) SCIENCEGARD IMPACTFACTOR 派博系數(shù) 清華大學 Yale Uni. Stanford Uni.
QQ|Archiver|手機版|小黑屋| 派博傳思國際 ( 京公網(wǎng)安備110108008328) GMT+8, 2025-10-6 13:04
Copyright © 2001-2015 派博傳思   京公網(wǎng)安備110108008328 版權(quán)所有 All rights reserved
快速回復(fù) 返回頂部 返回列表
大邑县| 集贤县| 遂昌县| 清河县| 九江县| 克什克腾旗| 三江| 阿克陶县| 香格里拉县| 清流县| 淮北市| 崇明县| 平谷区| 祁连县| 宜君县| 同仁县| 新泰市| 满洲里市| 洮南市| 上虞市| 根河市| 崇信县| 云阳县| 临西县| 合川市| 湖南省| 弋阳县| 新营市| 马龙县| 新巴尔虎右旗| 定结县| 黄山市| 泸定县| 长岛县| 福贡县| 安达市| 玉门市| 额济纳旗| 湘阴县| 历史| 江门市|