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Epitaxy of Solid Solutions and Multilayered Structures in the System Cd—Hg—Te as the most promising for fabricating photodetectors using “band engineering.” With respect to the structural and electrophysical parameters of the CMT films, all common epitaxial methods give the same excellent results. The carrier mobility in .-type Cd.Hg.Te reaches .. ≥ 2 ·10. cm. ?V/sec at a co

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HALL

Mechanism of Relaxation of the Nonequilibrium Liquid—Solid Interface before Liquid-Phase Heteroepitae contacting phases. The importance of understanding processes occurring at the nonequilibrium interface is obvious. Such contact is used both in preparation for epitaxial growth from the liquid and in production of the heterostructures themselves. In light of the tendency in all Technologies to gro

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Aggregation of Point Defects in Silicon Crystals Growing from the Meltgrowth microdefects are obviously due to intrinsic point defects (IPD) generated at the crystallization temperature .. that persist during cooling and are not annealed at dislocation pileups but form various aggregates (clusters). The IPD equilibrium concentration in Si is relatively low [.], of the

Boycott

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