Titlebook: ;

協(xié)奏曲

雄偉

Mechanism of Relaxation of the Nonequilibrium Liquid—Solid Interface before Liquid-Phase Heteroepitaw thinner and thinner (quantum-well) films, nonequilibrium processes occurring at the liquid-solid interface become an important part of the whole process of epitaxial growth. They determine the initial stages of formation and the structural and electrophysical properties of such a heterostructure.

衍生

NADIR

FRAX-tool

Step Kinetics on Crystal Surfaces in the Presence of Anisotropy and Impuritiesions. An experimental technique has recently appeared that enables the dislocation structure [.] or surface relief to be observed at the level of monatomic steps [.]. Thus, extremely fine details can be studied.

FECT

High-Resolution Transmission Electron Microscopic Study of Epitaxial Layersates by various methods can be studied. The layers can be investigated at different stages of growth. The atomic structure of the interface can be characterized. The method of compensating the structural misfit of the layer with the substrate is revealed. The effect of several technical factors can be found.

庇護(hù)

https://doi.org/10.1007/978-3-319-70755-6A new class of semiconducting structures with .-doped layers and a high concentration of layered quasi-two-dimensional charge carriers is currently of great interest. On one hand these layers have interesting physical properties, on the other they are promising for practical applications [.].

arsenal

Hla461

-Structures in Gallium ArsenideA new class of semiconducting structures with .-doped layers and a high concentration of layered quasi-two-dimensional charge carriers is currently of great interest. On one hand these layers have interesting physical properties, on the other they are promising for practical applications [.].

disrupt