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Titlebook: Ga Organogallium Compounds; Part 1 Jean-Claude Maire,Ulrich Krüerke,Christa Siebert,U Book 1986Latest edition Springer-Verlag Berlin Heidel

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31#
發(fā)表于 2025-3-26 22:17:42 | 只看該作者
https://doi.org/10.1007/978-3-030-99295-8l and solvent (pumping at -15°C for 2 d), followed by distillation at 25 to 30°C under high vacuum, yielded a colorless liquid consisting of a mixture of the compound (76%) and Ga(CH.).H (based on analyses). The products could not be separated because Ga(CH.).GeH. decomposes slowly at 25°C to give G
32#
發(fā)表于 2025-3-27 02:47:21 | 只看該作者
33#
發(fā)表于 2025-3-27 08:45:14 | 只看該作者
Virginia Woolf and D.H. Lawrence,scribed in Sections 13.6.2.1 to 13.6.2.4. With organogallium species five types of complexes have been described in the literature. Formula I represents adducts of Ga(C.H.). with anionic 18-electron complexes (no adducts with neutral species are known). Compounds with a three-coordinate Ga atom are
34#
發(fā)表于 2025-3-27 12:31:02 | 只看該作者
35#
發(fā)表于 2025-3-27 16:42:25 | 只看該作者
Intermezzo: American Populism and the Jews,w adducts, and were believed to arise from reductive elimination of Si(CH.). from M[Ga(CH.Si(CH.).).H] intermediates [1]. But these results could not be reproduced later, and the products were identified as alkali metal compounds of the hydrido anion [Ga(CH.Si(CH.).).H]. [2]; see 13.2, p. 320.
36#
發(fā)表于 2025-3-27 21:27:13 | 只看該作者
37#
發(fā)表于 2025-3-28 00:38:33 | 只看該作者
38#
發(fā)表于 2025-3-28 04:58:31 | 只看該作者
39#
發(fā)表于 2025-3-28 08:35:13 | 只看該作者
is concluded by a few low-valence organogallium compounds (Chapter 14) that (I) atom and an aromatic ligand in an TJe fashion. exhibit bonding interaction between a gallium Due to a free coordination site at the Ga atom, neutral compounds form many adducts with Lewis bases (symbol D). These adducts are descr978-3-662-07374-2
40#
發(fā)表于 2025-3-28 11:58:25 | 只看該作者
Organogallium-Oxygen Compounds, electroreduction of CH.I on a Ga cathode in CH.CN-NaClO. gives the compound in about 35 to 40% yield along with “GaCH.O” [10]. The formation of Ga(CH.).OH by thermal decomposition of Ga(CH.).OOCH. at 120°C in C.H. [12] and of Ga(CH.).OOC.H.-t under similar conditions [12,13] is also reported; see p
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