Titlebook: CMOS RF Circuit Design for Reliability and Variability; Jiann-Shiun Yuan Book 2016 The Author(s) 2016 Device Reliaiblity.Hot Electron Effe

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無(wú)關(guān)緊要

CMOS Transistor Reliability and Variability Mechanisms,This chapter talks about device reliability mechanisms such as hot electron injection, gate oxide breakdown, negative bias temperature instability and process variation.

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Power Amplifier Reliability,This chapter talks about power amplifier reliability subjected to voltage stress and thermal effect. Both class AB and class E power amplfiiers are discussed. In addition, the class E power amplifier is fabricated using 0.18 micron CMOS process and experimental data of power amplifier performance before and after stress are presented.

必死

Voltage-Controlled Oscillator Reliability,This chapter talks about the LC oscillator reliability subjected to electrical stress. Mixed-mode device and circuit simulation results as well as experimental data of voltage-controlled LC oscillators are presented.

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Mixer Reliability,This chapter talks about millimeter-wave mixer reliability subjected to electrical stress. Transistor stress data in additional to mixer performance before and after stress are provided.

EVEN

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