找回密碼
 To register

QQ登錄

只需一步,快速開始

掃一掃,訪問微社區(qū)

打印 上一主題 下一主題

Titlebook: CMOS RF Circuit Design for Reliability and Variability; Jiann-Shiun Yuan Book 2016 The Author(s) 2016 Device Reliaiblity.Hot Electron Effe

[復制鏈接]
查看: 8268|回復: 43
樓主
發(fā)表于 2025-3-21 18:01:32 | 只看該作者 |倒序瀏覽 |閱讀模式
書目名稱CMOS RF Circuit Design for Reliability and Variability
編輯Jiann-Shiun Yuan
視頻videohttp://file.papertrans.cn/221/220362/220362.mp4
概述First book to address the effect of device reliability and process variations on the RF circuit performance degradations.Present of all kinds RF circuits in the reliability examination.Includes analyt
叢書名稱SpringerBriefs in Applied Sciences and Technology
圖書封面Titlebook: CMOS RF Circuit Design for Reliability and Variability;  Jiann-Shiun Yuan Book 2016 The Author(s) 2016 Device Reliaiblity.Hot Electron Effe
描述The subject of this book is CMOS RF circuit design for reliability. The device reliability and process variation issues on RF transmitter and receiver circuits will be particular interest to the readers in the field of semiconductor devices and circuits. This proposed book is unique to explore typical reliability issues in the device and technology level and then to examine their impact on RF wireless transceiver circuit performance. Analytical equations, experimental data, device and circuit simulation results will be given for clear explanation. The main benefit the reader derive from this book will be clear understanding on how device reliability issues affects the RF circuit performance subjected to operation aging and process variations.
出版日期Book 2016
關鍵詞Device Reliaiblity; Hot Electron Effect; Oxide Breakdown; Process Variation; RF Circuit Reliability
版次1
doihttps://doi.org/10.1007/978-981-10-0884-9
isbn_softcover978-981-10-0882-5
isbn_ebook978-981-10-0884-9Series ISSN 2191-530X Series E-ISSN 2191-5318
issn_series 2191-530X
copyrightThe Author(s) 2016
The information of publication is updating

書目名稱CMOS RF Circuit Design for Reliability and Variability影響因子(影響力)




書目名稱CMOS RF Circuit Design for Reliability and Variability影響因子(影響力)學科排名




書目名稱CMOS RF Circuit Design for Reliability and Variability網(wǎng)絡公開度




書目名稱CMOS RF Circuit Design for Reliability and Variability網(wǎng)絡公開度學科排名




書目名稱CMOS RF Circuit Design for Reliability and Variability被引頻次




書目名稱CMOS RF Circuit Design for Reliability and Variability被引頻次學科排名




書目名稱CMOS RF Circuit Design for Reliability and Variability年度引用




書目名稱CMOS RF Circuit Design for Reliability and Variability年度引用學科排名




書目名稱CMOS RF Circuit Design for Reliability and Variability讀者反饋




書目名稱CMOS RF Circuit Design for Reliability and Variability讀者反饋學科排名




單選投票, 共有 1 人參與投票
 

0票 0.00%

Perfect with Aesthetics

 

0票 0.00%

Better Implies Difficulty

 

1票 100.00%

Good and Satisfactory

 

0票 0.00%

Adverse Performance

 

0票 0.00%

Disdainful Garbage

您所在的用戶組沒有投票權限
沙發(fā)
發(fā)表于 2025-3-21 21:18:53 | 只看該作者
Book 2016 circuits will be particular interest to the readers in the field of semiconductor devices and circuits. This proposed book is unique to explore typical reliability issues in the device and technology level and then to examine their impact on RF wireless transceiver circuit performance. Analytical e
板凳
發(fā)表于 2025-3-22 00:54:07 | 只看該作者
地板
發(fā)表于 2025-3-22 06:07:45 | 只看該作者
5#
發(fā)表于 2025-3-22 12:28:02 | 只看該作者
https://doi.org/10.1007/b137366ulation is used to probe the physical insight. Analytical equations are dervied to provide the theoretical basis. Monte Carlo simulation results are shown to demonstrate the statistical variation of VCO performance subjected to process variation. Substrate bias technique helps reduce the process var
6#
發(fā)表于 2025-3-22 15:48:24 | 只看該作者
CMOS RF Circuit Design for Reliability and Variability978-981-10-0884-9Series ISSN 2191-530X Series E-ISSN 2191-5318
7#
發(fā)表于 2025-3-22 20:49:22 | 只看該作者
https://doi.org/10.1007/b137366ulation is used to probe the physical insight. Analytical equations are dervied to provide the theoretical basis. Monte Carlo simulation results are shown to demonstrate the statistical variation of VCO performance subjected to process variation. Substrate bias technique helps reduce the process variation effect on VCO performance fluctuation.
8#
發(fā)表于 2025-3-22 22:06:37 | 只看該作者
Oscillator Design for Variability,ulation is used to probe the physical insight. Analytical equations are dervied to provide the theoretical basis. Monte Carlo simulation results are shown to demonstrate the statistical variation of VCO performance subjected to process variation. Substrate bias technique helps reduce the process variation effect on VCO performance fluctuation.
9#
發(fā)表于 2025-3-23 03:06:59 | 只看該作者
Jiann-Shiun YuanFirst book to address the effect of device reliability and process variations on the RF circuit performance degradations.Present of all kinds RF circuits in the reliability examination.Includes analyt
10#
發(fā)表于 2025-3-23 07:54:37 | 只看該作者
SpringerBriefs in Applied Sciences and Technologyhttp://image.papertrans.cn/c/image/220362.jpg
 關于派博傳思  派博傳思旗下網(wǎng)站  友情鏈接
派博傳思介紹 公司地理位置 論文服務流程 影響因子官網(wǎng) 吾愛論文網(wǎng) 大講堂 北京大學 Oxford Uni. Harvard Uni.
發(fā)展歷史沿革 期刊點評 投稿經(jīng)驗總結 SCIENCEGARD IMPACTFACTOR 派博系數(shù) 清華大學 Yale Uni. Stanford Uni.
QQ|Archiver|手機版|小黑屋| 派博傳思國際 ( 京公網(wǎng)安備110108008328) GMT+8, 2026-1-30 06:44
Copyright © 2001-2015 派博傳思   京公網(wǎng)安備110108008328 版權所有 All rights reserved
快速回復 返回頂部 返回列表
嘉黎县| 肥城市| 顺昌县| 阳东县| 乐昌市| 五华县| 明光市| 五家渠市| 黄龙县| 万源市| 孝昌县| 阿拉善左旗| 枣阳市| SHOW| 东明县| 内丘县| 荥阳市| 改则县| 杭州市| 西贡区| 满洲里市| 江永县| 枣强县| 德安县| 鹰潭市| 葫芦岛市| 巨野县| 泰顺县| 泗水县| 高密市| 曲阜市| 威海市| 朝阳县| 库伦旗| 丰台区| 曲周县| 台州市| 丰城市| 安图县| 科技| 贺兰县|