Titlebook: CMOS RF Circuit Design for Reliability and Variability; Jiann-Shiun Yuan Book 2016 The Author(s) 2016 Device Reliaiblity.Hot Electron Effe

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書目名稱CMOS RF Circuit Design for Reliability and Variability影響因子(影響力)




書目名稱CMOS RF Circuit Design for Reliability and Variability影響因子(影響力)學(xué)科排名




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書目名稱CMOS RF Circuit Design for Reliability and Variability網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱CMOS RF Circuit Design for Reliability and Variability被引頻次




書目名稱CMOS RF Circuit Design for Reliability and Variability被引頻次學(xué)科排名




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書目名稱CMOS RF Circuit Design for Reliability and Variability年度引用學(xué)科排名




書目名稱CMOS RF Circuit Design for Reliability and Variability讀者反饋




書目名稱CMOS RF Circuit Design for Reliability and Variability讀者反饋學(xué)科排名

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Book 2016 circuits will be particular interest to the readers in the field of semiconductor devices and circuits. This proposed book is unique to explore typical reliability issues in the device and technology level and then to examine their impact on RF wireless transceiver circuit performance. Analytical e

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敵手

https://doi.org/10.1007/b137366ulation is used to probe the physical insight. Analytical equations are dervied to provide the theoretical basis. Monte Carlo simulation results are shown to demonstrate the statistical variation of VCO performance subjected to process variation. Substrate bias technique helps reduce the process var

GENUS

CMOS RF Circuit Design for Reliability and Variability978-981-10-0884-9Series ISSN 2191-530X Series E-ISSN 2191-5318

GENUS

https://doi.org/10.1007/b137366ulation is used to probe the physical insight. Analytical equations are dervied to provide the theoretical basis. Monte Carlo simulation results are shown to demonstrate the statistical variation of VCO performance subjected to process variation. Substrate bias technique helps reduce the process variation effect on VCO performance fluctuation.

專心

Oscillator Design for Variability,ulation is used to probe the physical insight. Analytical equations are dervied to provide the theoretical basis. Monte Carlo simulation results are shown to demonstrate the statistical variation of VCO performance subjected to process variation. Substrate bias technique helps reduce the process variation effect on VCO performance fluctuation.

多樣

Jiann-Shiun YuanFirst book to address the effect of device reliability and process variations on the RF circuit performance degradations.Present of all kinds RF circuits in the reliability examination.Includes analyt

FEIGN

SpringerBriefs in Applied Sciences and Technologyhttp://image.papertrans.cn/c/image/220362.jpg