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Titlebook: 3D Flash Memories; Rino Micheloni Book 2016 Springer Science+Business Media Dordrecht 2016 3-D NAND Flash Memories.3-D Flash Memory Techno

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樓主: energy
41#
發(fā)表于 2025-3-28 16:20:02 | 只看該作者
https://doi.org/10.1007/978-3-642-95617-1nd lower cost. As a matter of fact, the last mainstream memory, NAND Flash memory, was created decades ago. Nowadays, NAND Flash memory, based on metal-oxide-semiconductor field-effect-transistor with an additional floating gate, is still one of the most popular nonvolatile memories. However, its sp
42#
發(fā)表于 2025-3-28 20:30:19 | 只看該作者
https://doi.org/10.1007/978-3-642-95617-1n the other hand, mainly driven by the success of Solid State Drives (SSDs), capacity requirement has grown dramatically to the extent that standard packaging (and design) techniques are no longer able to sustain the pace. In order to solve this issue, two approaches are possible: advanced die stack
43#
發(fā)表于 2025-3-29 00:39:56 | 只看該作者
44#
發(fā)表于 2025-3-29 03:10:49 | 只看該作者
https://doi.org/10.1007/978-3-642-95617-1odes and non-binary low-density parity-check (LDPC) codes. Both of these techniques are inspired by traditional coding theory; however, in both cases, we depart from classical approaches and develop new concepts specifically designed to take advantage of inherent channel characteristics that describ
45#
發(fā)表于 2025-3-29 10:29:58 | 只看該作者
Three-Dimensional Imaging: Technical Aspectsional (2D) scaling, it is facing various limitations such as lithography cost and cell-to-cell coupling interference. To sustain the trend of bit-cost reduction beyond 10?nm technology node, 3D NAND flash memory is considered as the next generation technique. Further, emerging memories called storag
46#
發(fā)表于 2025-3-29 13:59:39 | 只看該作者
https://doi.org/10.1007/978-94-017-7512-03-D NAND Flash Memories; 3-D Flash Memory Technology; 3-D planar charge trap technology; Die Stacking F
47#
發(fā)表于 2025-3-29 19:05:26 | 只看該作者
978-94-024-1365-6Springer Science+Business Media Dordrecht 2016
48#
發(fā)表于 2025-3-29 20:07:57 | 只看該作者
49#
發(fā)表于 2025-3-29 23:54:13 | 只看該作者
Qingxin Yang,Evgenii V. Kondratenkoh memory die, this density is defined as the ratio between the storage capacity of the die, Die_Capacity, and its silicon area, Die_Size. In this chapter we present some of the most advanced architectures of 3D arrays with vertical channels, which were mainly developed to increase Bit_Density and reduce the Source Line effect.
50#
發(fā)表于 2025-3-30 07:31:56 | 只看該作者
https://doi.org/10.1007/978-3-642-95617-1odes and non-binary low-density parity-check (LDPC) codes. Both of these techniques are inspired by traditional coding theory; however, in both cases, we depart from classical approaches and develop new concepts specifically designed to take advantage of inherent channel characteristics that describe non-volatile memories.
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