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Titlebook: 3D Flash Memories; Rino Micheloni Book 2016 Springer Science+Business Media Dordrecht 2016 3-D NAND Flash Memories.3-D Flash Memory Techno

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發(fā)表于 2025-3-21 19:37:01 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
期刊全稱(chēng)3D Flash Memories
影響因子2023Rino Micheloni
視頻videohttp://file.papertrans.cn/101/100715/100715.mp4
發(fā)行地址The first book to focus on 3D flash memories.Provides details of flash 3D architectures which have never been published before, including a number of 3D cross sections.Offers unique coverage of flash
圖書(shū)封面Titlebook: 3D Flash Memories; Rino Micheloni Book 2016 Springer Science+Business Media Dordrecht 2016 3-D NAND Flash Memories.3-D Flash Memory Techno
影響因子.This book walks the reader through the next step in the evolution of NAND flash memory technology, namely the development of 3D flash memories, in which multiple layers of memory cells are grown within the same piece of silicon.? It describes their working principles, device architectures, fabrication techniques and practical implementations, and highlights why 3D flash is a brand new technology..After reviewing market trends for both NAND and solid state drives (SSDs), the book digs into the details of the flash memory cell itself, covering both floating gate and emerging charge trap technologies. There is a plethora of different materials and vertical integration schemes out there. New memory cells, new materials, new architectures (3D Stacked, BiCS and P-BiCS, 3D FG, 3D VG, 3D advanced architectures); basically, each NAND manufacturer has its own solution. Chapter 3 to chapter 7 offer a broad overview of how 3D can materialize. The 3D wave is impacting emerging memories as well and chapter 8 covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures can be a challenge for the human brain: this is way all these chapters contain a lot of bird’s-eye views and cros
Pindex Book 2016
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沙發(fā)
發(fā)表于 2025-3-21 22:27:10 | 只看該作者
板凳
發(fā)表于 2025-3-22 02:51:01 | 只看該作者
https://doi.org/10.1007/978-3-319-03677-9undamental technology used to create the NAND memory cell, and (3) changes in usages in different segments which have made SSDs the critical growth segment in NAND. Let us examine all these changes in a little more detail.
地板
發(fā)表于 2025-3-22 04:37:24 | 只看該作者
https://doi.org/10.1007/978-3-642-95617-1ackaging (and design) techniques are no longer able to sustain the pace. In order to solve this issue, two approaches are possible: advanced die stacking and 3D monolithic technologies. This chapter covers the former, while the latter is the main subject of this book.
5#
發(fā)表于 2025-3-22 12:34:51 | 只看該作者
Three-Dimensional Imaging: Technical Aspectse world. This is especially true when looking at planar (2D) ultra-scaled (e.g. 15nm) NAND. Generally speaking, LDPC offers higher correction capabilities, but BCH remains a good solution when bandwidth requirements are very stringent. This chapter provides an overview of both BCH and LDPC state-of-the-art solutions.
6#
發(fā)表于 2025-3-22 13:29:00 | 只看該作者
https://doi.org/10.1007/978-3-319-03677-9roblems experimentally observed in different 3D CT cell concepts is reported. Finally, 3D FG memory concept is briefly introduced in order to understand the related reliability implications, and a comparison between 3D CT and 3D FG arrays is provided in terms of reliability and expected performances.
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發(fā)表于 2025-3-22 19:23:56 | 只看該作者
8#
發(fā)表于 2025-3-22 22:05:08 | 只看該作者
Three-Dimensional Imaging: Technical Aspectsl 3D-NAND flash SSD due to SCM’s fast speed. In addition, the performance of the SSD is workload dependent. Thus, it is meaningful to obtain the design guidelines of 3D NAND flash for both all 3D-NAND flash SSD and hybrid SCM/3D-NAND flash SSD with representative real-world workloads.
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發(fā)表于 2025-3-23 02:36:03 | 只看該作者
The Business of NAND,aus ist dort wesentlich nach Th. H. . Karte der Landwirtschaftsgebiete (.) angegeben. Sie verl?uft von Hamilton Inlet an der Nordostküste Labradors unter 53° westw?rts nach der Jamesbucht der Hudsonbai, von da nordwestw?rts zum Grossen Sklavensee, erreicht den Mackenzie unter 63°, biegt zurück auf 6
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發(fā)表于 2025-3-23 08:32:46 | 只看該作者
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