Titlebook: Variation-Aware Advanced CMOS Devices and SRAM; Changhwan Shin Book 2016 Springer Science+Business Media Dordrecht 2016 CMOS Device Design

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Introduction: Barriers Preventing CMOS Device Technology from Moving Forward,by mobile devices that, in turn, have been built on the foundation established in the silicon technology revolution, when the semiconductor industries began to develop complementary metal oxide semiconductor (CMOS) technology on a continuous basis at the pace described in Moore’s law.

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Random Dopant Fluctuation (RDF)ree of integration has grown exponentially. However, below the 1 μm technology node, a serious technical issue was encountered that frustrated further shrinking of the gate pitch, namely, the short channel effect (SCE) (Yau in Solid-State Electron 17(10):1059–1063, 1974, [2]; Yan in IEEE Trans Electron Devices 39(7):1704–1710, 1992, [3]).

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1437-0387 ce design, such as how to overcome process-induced random va.This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-flu

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Introduction: Barriers Preventing CMOS Device Technology from Moving Forward,venient since hand-held mobile electronic devices were developed. This new era, called the era of the “hyper-connected society,” has been facilitated by mobile devices that, in turn, have been built on the foundation established in the silicon technology revolution, when the semiconductor industries

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Random Dopant Fluctuation (RDF)ave doubled the density of transistors in integrated circuits (ICs) every two years. This has rapidly increased the performance of ICs because the degree of integration has grown exponentially. However, below the 1 μm technology node, a serious technical issue was encountered that frustrated further

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Quasi-Planar Trigate (QPT) Bulk MOSFETof integrated circuit (IC) chips has intensified the process-induced random variation [i.e., the threshold voltage (..) variation caused by line-edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV)].

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