Titlebook: Variation-Aware Advanced CMOS Devices and SRAM; Changhwan Shin Book 2016 Springer Science+Business Media Dordrecht 2016 CMOS Device Design

KEN

書目名稱Variation-Aware Advanced CMOS Devices and SRAM影響因子(影響力)




書目名稱Variation-Aware Advanced CMOS Devices and SRAM影響因子(影響力)學科排名




書目名稱Variation-Aware Advanced CMOS Devices and SRAM網(wǎng)絡(luò)公開度




書目名稱Variation-Aware Advanced CMOS Devices and SRAM網(wǎng)絡(luò)公開度學科排名




書目名稱Variation-Aware Advanced CMOS Devices and SRAM被引頻次




書目名稱Variation-Aware Advanced CMOS Devices and SRAM被引頻次學科排名




書目名稱Variation-Aware Advanced CMOS Devices and SRAM年度引用




書目名稱Variation-Aware Advanced CMOS Devices and SRAM年度引用學科排名




書目名稱Variation-Aware Advanced CMOS Devices and SRAM讀者反饋




書目名稱Variation-Aware Advanced CMOS Devices and SRAM讀者反饋學科排名

HARP

領(lǐng)巾

Arctic

Fillet,Filet

Applications in Static Random Access Memory (SRAM)Continuous efforts to shrink the physical size of transistors enable the integration of a larger number of transistors on a single chip.

Sigmoidoscopy

Changhwan ShinOffers an insightful overview of the key techniques in variation-immune CMOS device designs.Covers the main contemporary issues in CMOS device design, such as how to overcome process-induced random va

plasma

Quasi-Planar Trigate (QPT) Bulk MOSFETof integrated circuit (IC) chips has intensified the process-induced random variation [i.e., the threshold voltage (..) variation caused by line-edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV)].

溫室

Tunnel FET (TFET) 300?K) is a main bottleneck in scaling down the power supply voltage (..) as well as extensively reducing the power consumption in integrated circuits (ICs). As the gate voltage lowers the height of the channel potential barrier, the electrons in the source region move into channel region by the thermionic emission process.

Neutropenia

Springer Series in Advanced Microelectronicshttp://image.papertrans.cn/v/image/980553.jpg

DOLT

https://doi.org/10.1007/978-94-017-7597-7CMOS Device Designs; Integrated circuits; Line Edge Roughness; MOSFET; Process-Induced Random Variation;