找回密碼
 To register

QQ登錄

只需一步,快速開始

掃一掃,訪問微社區(qū)

打印 上一主題 下一主題

Titlebook: VLSI-SoC: From Algorithms to Circuits and System-on-Chip Design; 20th IFIP WG 10.5/IE Andreas Burg,Ay?e Co?kun,Ricardo Reis Conference proc

[復制鏈接]
樓主: Capricious
31#
發(fā)表于 2025-3-26 23:11:03 | 只看該作者
32#
發(fā)表于 2025-3-27 03:04:44 | 只看該作者
Fault-Tolerant Techniques to Manage Yield and Power Constraints in Network-on-Chip Interconnectionsber of faults that may occur during the process. In this work, we propose a set of fault-tolerant techniques to cope with faulty wires in Network-on-Chip (NoC). The most appropriate technique is chosen by taking into account the number of faulty wires and their location in the NoC. The goal is to co
33#
發(fā)表于 2025-3-27 05:38:47 | 只看該作者
On the Automatic Generation of Software-Based Self-Test Programs for Functional Test and Diagnosis s, and during the operational phase. However, when Very Long Instruction Word (VLIW) processors are addressed these techniques require some optimization steps in order to properly exploit the parallelism intrinsic in these architectures. In this chapter we present a new method that, starting from pr
34#
發(fā)表于 2025-3-27 12:21:26 | 只看該作者
35#
發(fā)表于 2025-3-27 16:04:30 | 只看該作者
36#
發(fā)表于 2025-3-27 19:13:01 | 只看該作者
Simulation and Experimental Characterization of a Unified Memory Device with Two Floating-Gates,ncept device and confirmed through simulation. The dynamic, nonvolatile, and concurrent modes of the device are described in detail. Simulations show that the device compares favorably to conventional memory devices. Applications enabled by this unified memory device are discussed, highlighting the
37#
發(fā)表于 2025-3-28 01:20:29 | 只看該作者
38#
發(fā)表于 2025-3-28 05:45:54 | 只看該作者
SEU-Aware Low-Power Memories Using a Multiple Supply Voltage Array Architecture,to lower memory power using a dual . . in a column-based . . memory with Built-In Current Sensors (BICS). Using our method, we reduce the memory power by about 40% and increase the error immunity of the memory without the significant power overhead as in previous methods.
39#
發(fā)表于 2025-3-28 07:09:10 | 只看該作者
40#
發(fā)表于 2025-3-28 13:13:08 | 只看該作者
CMOS Implementation of Threshold Gates with Hysteresis,orks into one composite transistor network. The new static gates are then compared to the original ones in terms of delay, area, and energy consumption. It will be shown that the new gate style is significantly faster with negligible area and energy overhead.
 關于派博傳思  派博傳思旗下網(wǎng)站  友情鏈接
派博傳思介紹 公司地理位置 論文服務流程 影響因子官網(wǎng) 吾愛論文網(wǎng) 大講堂 北京大學 Oxford Uni. Harvard Uni.
發(fā)展歷史沿革 期刊點評 投稿經(jīng)驗總結 SCIENCEGARD IMPACTFACTOR 派博系數(shù) 清華大學 Yale Uni. Stanford Uni.
QQ|Archiver|手機版|小黑屋| 派博傳思國際 ( 京公網(wǎng)安備110108008328) GMT+8, 2025-10-6 14:04
Copyright © 2001-2015 派博傳思   京公網(wǎng)安備110108008328 版權所有 All rights reserved
快速回復 返回頂部 返回列表
无棣县| 朝阳市| 广丰县| 那坡县| 平遥县| 中西区| 个旧市| 祁连县| 乌兰察布市| 宜兴市| 怀仁县| 乌兰察布市| 杭锦旗| 中阳县| 和林格尔县| 友谊县| 皮山县| 罗山县| 舒兰市| 丰台区| 澄城县| 樟树市| 灵武市| 海丰县| 安新县| 安岳县| 友谊县| 麻城市| 贵德县| 道真| 长海县| 潮州市| 苗栗市| 河津市| 福鼎市| 武隆县| 陕西省| 石渠县| 铜川市| 个旧市| 比如县|