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Titlebook: VLSI Algorithms and Architectures; Aegean Workshop on C Filia Makedon,Kurt Mehlhorn,P. Spirakis Conference proceedings 1986 Springer-Verlag

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41#
發(fā)表于 2025-3-28 15:48:15 | 只看該作者
Yael Maon,Baruch Schieber,Uzi Vishkinlighting purposes in buildings and other structures. The types of materials discussed are antireflection films, reflectors, absorbers, radiative cooling films, transparent Low-emittance coatings, fluorescent concentrators, spectral splitting films, aerogel insulation, optical switching devices light
42#
發(fā)表于 2025-3-28 19:58:54 | 只看該作者
43#
發(fā)表于 2025-3-29 02:54:51 | 只看該作者
Alok Aggarwal,J. Lawrence Carter,S. Rao Kosarajurity of a country. Firewood is the fourth most important source of energy after coal, oil, and natural gas, considering the World as a whole. The fuel wood used in developing countries and developed countries are 80 percent and 10 percent respectively [1]. For the world as a whole about 50 percent o
44#
發(fā)表于 2025-3-29 04:44:01 | 只看該作者
Günter Rotevailable in the field of solar energy (applied and theoretical in nature) and to as- sist both the students ( i. e. undergraduate, postgraduate, research scholars etc.) and the professionals (i.e. consulting, design and contracting firms). I have discussed each and every topic in depth rather than a
45#
發(fā)表于 2025-3-29 10:13:27 | 只看該作者
46#
發(fā)表于 2025-3-29 13:53:33 | 只看該作者
Arnold L. Rosenberghanges in surface emissivity, i.e. the reduced cooling in spots and enhanced emission by small scale magnetic fields, are the most effective mechanisms and account for most of the observed variation. Helioseismology will soon be able to test the consequences of changes in surface emissivity, and dis
47#
發(fā)表于 2025-3-29 17:32:55 | 只看該作者
48#
發(fā)表于 2025-3-29 21:31:00 | 只看該作者
Rolf Müller,Thomas Lengauertra yield direct information on structure, surface orientation, and composition of semiconductor layers as thin as a few monolayers. “Forbidden” electric-field induced LO-phonon scattering in polar semiconductors leads to information on surface or interface barrier heights. The formation of semicond
49#
發(fā)表于 2025-3-30 02:03:11 | 只看該作者
50#
發(fā)表于 2025-3-30 07:39:24 | 只看該作者
A. M. Paschalis,D. Nikolos,C. Halatsisned in the plane of a two-dimensional electron gas via the application of negative bias voltages to lithographically structured electrodes. The resulting depletion regions yield a parallel geometry where only one quantum dot is directly coupled to the source and drain reservoirs. The second dot is c
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