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Titlebook: Scanning Microscopy; Symposium Proceeding Rainer Kassing Conference proceedings 1992 ECSC-EEC-EAEC, Brussels-Luxembourg 1992 Atomare Aufl?s

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樓主: Dangle
41#
發(fā)表于 2025-3-28 15:44:03 | 只看該作者
42#
發(fā)表于 2025-3-28 18:45:02 | 只看該作者
ecture which was followed by a discussion. The resulting contributions are contained in this proceedings. Microscopic techniques are used not only for research work in material and life science but also for routine applications in almost any vital section of our everyday life. The demand for coming to a bette978-3-642-84812-4978-3-642-84810-0
43#
發(fā)表于 2025-3-29 01:49:27 | 只看該作者
Performance and selection criteria of critical components of STM and AFM,and performance criteria of some of the critical components of these instruments. The emphasis is the design of instruments suitable for technological applications. The paper examines criteria for the tips, scanners, and general optical and mechanical configurations. An example is given for a soluti
44#
發(fā)表于 2025-3-29 06:20:27 | 只看該作者
Investigations on the SFM,ion can be obtained. Besides the Scanning Tunneling Microscope (STM) [2], optical [3], acoustical [4] and magnetic [5] nearfield microscopy, the Scanning Capacitance Microscope (SCM) [6], the Scanning Thermal Profiler [7] and the Scanning Ion Conductance Microscope [8], especially the Scanning Force
45#
發(fā)表于 2025-3-29 09:10:53 | 只看該作者
New Scanning Microscopy Techniques: Scanning Noise Microscopy Scanning Tunneling Microscopy Assisteiometry will be discussed. The second part will describe the investigation of the interaction of surface plasmons with the tunneling process of electrons..The analysis of the current noise in scanning tunneling microscopy experiments reveals that at zero bias white thermal noise is observed. Its amp
46#
發(fā)表于 2025-3-29 14:42:47 | 只看該作者
AN STM Study of the Oxygenation of Silicon,curs rapidly with a sticking coefficient of ~0.02. Three types of defect or reacted site are found on the surface; the number density of the two commonest defects increasing linearly with oxygen dose. The commoner of the two defect types exhibits image contrast consistent with a depletion in electro
47#
發(fā)表于 2025-3-29 18:10:29 | 只看該作者
Study of epitaxial growth by combination of STM and LEED,types of possible deviations from an ideal epitaxial film. For those studies it is important to see details of the starting substrate and of growing islands by direct microscopy, which is best accomplished by STM. The same way it is necessary to have good average values and distribution functions of
48#
發(fā)表于 2025-3-29 23:42:29 | 只看該作者
49#
發(fā)表于 2025-3-30 03:50:46 | 只看該作者
Molecular Imaging with the Scanning Tunneling Microscope,n organic layers on conducting substrates. Since STM itself does not require ultrahigh vacuum conditions, both the free surfaces as well as interfaces with fluid ambients are accessible. Unique is the ability of STM to investigate molecular defects on the atomic length scale. Moreover, it allows, fo
50#
發(fā)表于 2025-3-30 05:23:31 | 只看該作者
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