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Titlebook: Scanning Microscopy; Symposium Proceeding Rainer Kassing Conference proceedings 1992 ECSC-EEC-EAEC, Brussels-Luxembourg 1992 Atomare Aufl?s

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31#
發(fā)表于 2025-3-26 22:19:24 | 只看該作者
U. Hartmann,R. Berthe,T. G?ddenhenrich,H. Lemke,C. Heidennce for both theory and practice arising from the studied phenomenon. Some findings concerning each of the three research questions have already been presented in each chapter, and thus below they are elaborated on in terms of both the integration of the particular and general objectives and with re
32#
發(fā)表于 2025-3-27 02:40:50 | 只看該作者
G. A. D. Briggs,R. Gundle,C. W. Lawrence,A. Rodriguez-Rey,C. B. Scrubysive skills attainment. Sociomaterial contributions arise from the interactions workers perform with the tools, equipment, machinery, materials and other artefacts of trades work. From these objects and items, the learning of the nuanced ways to work with and for these artefacts provides learners wi
33#
發(fā)表于 2025-3-27 05:38:38 | 只看該作者
34#
發(fā)表于 2025-3-27 11:41:14 | 只看該作者
35#
發(fā)表于 2025-3-27 17:10:27 | 只看該作者
H. K. Wickramasingheation and identities. She thus highlights questions of the ‘encultured, affective, corporeal and located nature of musical experience’ (2010: 89). Similarly, in 2007 the composer/improvisor George Lewis made the argument for listening as a mode essentially linked to the body and thus deeply tied lis
36#
發(fā)表于 2025-3-27 20:33:13 | 只看該作者
37#
發(fā)表于 2025-3-27 23:15:44 | 只看該作者
New Scanning Microscopy Techniques: Scanning Noise Microscopy Scanning Tunneling Microscopy Assiste comparable to the one in conventional STM. As already a minor deviation from zero bias between tunneling tip and sample surface leads to a significant dc-component of the average current scanning noise microscopy can be very well combined with potentiometry. For any point on the sample the potentia
38#
發(fā)表于 2025-3-28 04:18:26 | 只看該作者
AN STM Study of the Oxygenation of Silicon,ement in the filled state density. Both defect types preferentially react in the faulted half of the unit cell with an 88% probability. The third type of defect, with only a weak dependence on oxygen dose, occurs at the corner of the unit cell and produces a large change in the electron barrier heig
39#
發(fā)表于 2025-3-28 06:44:26 | 只看該作者
40#
發(fā)表于 2025-3-28 12:23:14 | 只看該作者
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