Titlebook: Scanning Electron Microscopy; Physics of Image For Ludwig Reimer Book 1998Latest edition Springer-Verlag Berlin Heidelberg 1998 Rasterelekt

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書(shū)目名稱Scanning Electron Microscopy影響因子(影響力)




書(shū)目名稱Scanning Electron Microscopy影響因子(影響力)學(xué)科排名




書(shū)目名稱Scanning Electron Microscopy網(wǎng)絡(luò)公開(kāi)度




書(shū)目名稱Scanning Electron Microscopy網(wǎng)絡(luò)公開(kāi)度學(xué)科排名




書(shū)目名稱Scanning Electron Microscopy被引頻次




書(shū)目名稱Scanning Electron Microscopy被引頻次學(xué)科排名




書(shū)目名稱Scanning Electron Microscopy年度引用




書(shū)目名稱Scanning Electron Microscopy年度引用學(xué)科排名




書(shū)目名稱Scanning Electron Microscopy讀者反饋




書(shū)目名稱Scanning Electron Microscopy讀者反饋學(xué)科排名

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Introduction,so that an electron probe of diameter 1–10 nm carrying an electron-probe current of 10.?10. A is formed at the specimen surface. For modes of operation that need a higher electron-probe current of ? 10. A, the probe diameter increases to ? 0.1 .m.

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Emission of Backscattered and Secondary Electrons,ckscattering coefficient . and the secondary electron yield . on surface tilt, material and electron energy and their angular and energy distributions is essential for the interpretation of image contrast. The spatial exit distributions and information depths of these electrons govern the resolution

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