Titlebook: Resonant Tunneling in Semiconductors; Physics and Applicat L. L. Chang,E. E. Mendez,C. Tejedor Book 1991 Plenum Press, New York 1991 scatte

關(guān)心

Investigations on Resonant Tunneling and the Role of Interface Roughness Scattering in Quantum Wellss not conserved but randomized due to interface roughness scattering in the quantum well. Data showing the effect of a growth interruption and of substrate misorientation on the measured negative differential conductance are briefly discussed.

保留

Noise in Double-Barrier Resonant Tunneling Structures, the noise is generally not linear in current and can be much larger than the full shot noise. In particular, it displays pronounced peaks in a quantizing magnetic field, at biases where the I-V curve exhibits negative differential resistances due to Landau quantization.

cunning

Book 1991 Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit- nessed in quantum structures in general. Resonant tunneling shares also the multi- disciplinary n

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引水渠

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