Titlebook: Resonant Tunneling in Semiconductors; Physics and Applicat L. L. Chang,E. E. Mendez,C. Tejedor Book 1991 Plenum Press, New York 1991 scatte

Monomania

書目名稱Resonant Tunneling in Semiconductors影響因子(影響力)




書目名稱Resonant Tunneling in Semiconductors影響因子(影響力)學(xué)科排名




書目名稱Resonant Tunneling in Semiconductors網(wǎng)絡(luò)公開度




書目名稱Resonant Tunneling in Semiconductors網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Resonant Tunneling in Semiconductors被引頻次




書目名稱Resonant Tunneling in Semiconductors被引頻次學(xué)科排名




書目名稱Resonant Tunneling in Semiconductors年度引用




書目名稱Resonant Tunneling in Semiconductors年度引用學(xué)科排名




書目名稱Resonant Tunneling in Semiconductors讀者反饋




書目名稱Resonant Tunneling in Semiconductors讀者反饋學(xué)科排名

萬靈丹

針葉類的樹

978-1-4613-6716-1Plenum Press, New York 1991

LAITY

Resonant Tunneling in Semiconductors978-1-4615-3846-2Series ISSN 0258-1221

阻止

A Perspective of Resonant Tunnelingductor materials, proceeds to discuss the effects of band structure and electron dynamics, continues to describe systems of multiple barriers and low dimensional electrons, and ends with a summary of device applications. The emphasis is on major experimental observations, which serve as cornerstones of this field.

Ambulatory

Resonant Tunneling of Holes in Strained Layers—SiGe/Siort direction has been investigated. With the perpendicular field direction, tunneling of light and heavy holes can he clearly discriminated, while the parallel magnetic field gives complicated results. A hot hole tunneling transistor has been successfully fabricated using a resonant tunneling emitter.

范例

Resonant Tunneling of Holes in the Envelope-Function Approximationresented. The formalism is applied to lattice-matched GaAs-AlAs and lattice-mismatched Si-Si.Ge.. The effects of mixing between heavy-hole, light-hole and spin-orbit split-off states are seen in the transmission coefficient. The calculated resonant bias values in the current are compared with experimental results.

圓桶

Gudgeon

Studies on Tunneling Characteristics on Asymmetric GaAs/AlAs Double-Barrier Structureser two opposite biases have systematically been studied. It is found that LO phonon-assisted tunneling in two opposite directions may possibly be controlled by the different dwell times of traversing electrons in the well as the structure is positively or negatively biased.

聲明