Titlebook: Oriented Crystallization on Amorphous Substrates; E. I. Givargizov Book 1991 Springer Science+Business Media New York 1991 computer.electr

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https://doi.org/10.1007/978-1-4899-2560-2computer; electronics; integrated circuit; optics; thin film; thin films

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Characterization of Oriented Films on Amorphous Substrates,ircuits, and the like. With this objective in mind, much attention must be paid to the electronic properties of the films, such as the mobility and lifetime of charge carriers, leakage currents, conductance, and interface charges and states. These properties depend, in turn, on the microstructure of the films.

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Alternatives to Oriented Crystallization on Amorphous Substrates,r films) on amorphous substrates by means of crystallization processes. In view of the broad interest in semiconductor films on insulating substrates, alternatives were and are being developed that have their own advantages and disadvantages with respect to these crystallization processes.

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ktro-Schlacke-Schwei?verfahrens Die grunds?tzliche Arbeitsweise des ESS-Verfahrens kann aus Abb. 1 abgelesen werden. Abb. 1 zeigt die vorbereitete Schwei?stelle. Die Kupferbacken dienen zur Führung des entstehenden Schmelzbades (Schlacke- und Metallbad) und zur Kühlung der Schwei?stelle. Der Schwei?

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