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Titlebook: Oriented Crystallization on Amorphous Substrates; E. I. Givargizov Book 1991 Springer Science+Business Media New York 1991 computer.electr

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發(fā)表于 2025-3-21 19:45:22 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書目名稱Oriented Crystallization on Amorphous Substrates
編輯E. I. Givargizov
視頻videohttp://file.papertrans.cn/705/704569/704569.mp4
叢書名稱Microdevices
圖書封面Titlebook: Oriented Crystallization on Amorphous Substrates;  E. I. Givargizov Book 1991 Springer Science+Business Media New York 1991 computer.electr
描述Present-day scienceand technology have become increasingly based on studies and applications of thin films. This is especiallytrue of solid-state physics, semiconduc- tor electronics, integrated optics, computer science, and the like. In these fields, it is necessary to use filmswith an ordered structure, especiallysingle-crystallinefilms, because physical phenomena and effects in such films are most reproducible. Also, active parts of semiconductor and other devices and circuits are created, as a rule, in single-crystal bodies. To date, single-crystallinefilms have been mainly epitaxial (or heteroepitaxial); i.e., they have been grown on a single-crystalline substrate, and principal trends, e.g., in the evolution of integrated circuits (lCs), have been based on continuing reduction in feature size and increase in the number of components per chip. However, as the size decreases into the submicrometer range, technological and physical limitations in integrated electronics become more and more severe. It is generally believed that a feature size of about 0.1um will have a crucial character. In other words, the present two-dimensional ICs are anticipated to reach their limit of minim
出版日期Book 1991
關(guān)鍵詞computer; electronics; integrated circuit; optics; thin film; thin films
版次1
doihttps://doi.org/10.1007/978-1-4899-2560-2
isbn_softcover978-1-4899-2562-6
isbn_ebook978-1-4899-2560-2
copyrightSpringer Science+Business Media New York 1991
The information of publication is updating

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E. I. Givargizovgen-Vertikal-Schwei?en die Beobachtung gemacht, da? der zugeführte Schwei?draht zeitweise ohne Lichtbogen abschmolz. Die Untersuchung dieses Vorganges führte zur Entwicklung eines neuen Schwei?verfahrens, des soge- nannten Elektro-Schlacke-Schwei?ens. Gleichzeitig mit dem Schwei?verfahren entwickelt
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E. I. Givargizovf stark ab- sorbiert, und die Entladung breitet sich durch Photoeffekt im Gas in einer engen drahtnahen Zone in kleinen Schritten von ca. 1 mm L?nge aus [2]. HUSTER und ZIEGLER [3] hatten dagegen gefunden, da? in der Entladung auch von selbst- l?schenden Z?hlrohren sehr viele Photonen gro?er Reichwe
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E. I. Givargizovhen Unterbrecher der Phywe AG, G?ttingen, eingesetzt. Zur Regelung der Sekund?rspannung bzw. der Funkenl?nge ist die Spannung am Ladekondensator in fünf Stufen einstellbar. Die maximale L?nge der Funkenstrecke betr?gt etwa 150 mm zwischen Spitze und Platte. Das entspricht einer Spannung von rd. 110
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