Titlebook: Optical Properties of Semiconductor Nanostructures; Marcin L. Sadowski,Marek Potemski,Marian Grynberg Book 2000 Springer Science+Business

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Optical Investigation of Coupled GaAs/Al0.3Ga0.7As Double Quantum Wells Separated by AIAs Barriersd theory show that when the barrier is so narrow that there is considerable overlap of wave functions in the two wells, the single quantum well electronic one-particle states split into symmetric and antisymmetric states with different energy levels. The splitting of energy levels is very sensitive

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Exciton Condensationtheory of the interacting electron-hole condensate, and a model of localised excitons interacting via the photon field in a microcavity. Beyond the mathematical similarity of these two problems, this allows us to comment on the qualitative and quantitative distinctions between a conventional semicon

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Coherent Response to Optical Pulses in Quantum Wellstwo physically different cases of undoped and doped systems. Coherent-control and optical beat experiments in intrinsic systems are studied in terms of the induced electrical polarisation associated with non-interacting excitons. In the case of a doped quantum well, we use a simple bosonisation proc

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Excitons in the Two-Dimensional Hole Gas at the Al0.5Ga0.5As/GaAs Interfaceirst observed the PL line on the low energy side of the GaAs exciton, the so-called the H-band, from a single heterojunction. They attributed the H-band emission to two-dimensional (2D) carriers that tunnel from the triangular well at the interface and recombine with free carriers (3D) in the flat b

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