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Titlebook: Optical Properties of Semiconductor Nanostructures; Marcin L. Sadowski,Marek Potemski,Marian Grynberg Book 2000 Springer Science+Business

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書目名稱Optical Properties of Semiconductor Nanostructures
編輯Marcin L. Sadowski,Marek Potemski,Marian Grynberg
視頻videohttp://file.papertrans.cn/703/702652/702652.mp4
叢書名稱NATO Science Partnership Subseries: 3
圖書封面Titlebook: Optical Properties of Semiconductor Nanostructures;  Marcin L. Sadowski,Marek Potemski,Marian Grynberg Book 2000 Springer Science+Business
描述Optical methods for investigating semiconductors and thetheoretical description of optical processes have always been animportant part of semiconductor physics. Only the emphasis placed ondifferent materials changes with time. Here, a large number of papersare devoted to quantum dots, presenting the theory, spectroscopicinvestigation and methods of producing such structures. Another majorpart of the book reflects the growing interest in dilutedsemiconductors and II-IV nanosystems in general. .There are also discussions of the fascinating field of photoniccrystals. `Classical‘ low dimensional systems, such as GsAs/GaAlAsquantum wells and heterostructures, still make up a significant partof the results presented, and they also serve as model systems for newphenomena. New materials are being sought, and new experimentaltechniques are coming on stream, in particular the combination ofdifferent spectroscopic modalities.
出版日期Book 2000
關(guān)鍵詞Exciton; Semiconductor; Vakuuminjektionsverfahren; crystal; optical properties; quantum dot; semiconductor
版次1
doihttps://doi.org/10.1007/978-94-011-4158-1
isbn_softcover978-0-7923-6316-3
isbn_ebook978-94-011-4158-1Series ISSN 1388-6576
issn_series 1388-6576
copyrightSpringer Science+Business Media Dordrecht 2000
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Optical Absorption and Carrier Transmission in Heterostructuresfile. The resulting optical transition matrix elements and transmission coefficient profiles are juxtaposed for the case of the conduction band. Calculations of absorption are performed both for conduction band (AlGaAs) and for valence band (Si/SiGe, 6-band Hamiltonian) quantum well type structures.
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Book 2000ystems, such as GsAs/GaAlAsquantum wells and heterostructures, still make up a significant partof the results presented, and they also serve as model systems for newphenomena. New materials are being sought, and new experimentaltechniques are coming on stream, in particular the combination ofdifferent spectroscopic modalities.
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