Titlebook: New Developments in Semiconductor Physics; Proceedings of the T G. Ferenczi,F. Beleznay Conference proceedings 1988 Springer-Verlag Berlin

Exacting

書(shū)目名稱(chēng)New Developments in Semiconductor Physics影響因子(影響力)




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書(shū)目名稱(chēng)New Developments in Semiconductor Physics被引頻次




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書(shū)目名稱(chēng)New Developments in Semiconductor Physics讀者反饋




書(shū)目名稱(chēng)New Developments in Semiconductor Physics讀者反饋學(xué)科排名

創(chuàng)新

刀鋒

The use of hydrostatic pressure and alloying to introduce deep levels in the forbidden gap of InSb taking their predominant character from higher conduction band minima. These states can be made to emerge into the forbidden gap by applying hydrostatic pressure. Judged by the measured pressure coefficients two sets of levels are closely tied to the L- and X-conduction band minima. At low temperat

披肩

傲慢物

Determination of the lateral defect distribution by SDLTS in GaAs,s approximation cannot be used without restrictions and investigation of the SDLTS signal as a function of generation parameters is necessary, as will be illustrated by measuring the EL2 distribution in GaAs Schottky barrier.

新陳代謝

facilitate

樣式

Spectroscopic studies of point defects in silicon and germanium,ts from group III and V in the Periodic Table, special attention is given to defects with binding energies of the ground state much larger than those predicted by the effective mass theory (EMT) such as double donors (group VI) and double acceptors (group II) as well as transition metals. All these

malign

Interpretation of the electric field dependent thermal emission data of deep traps, the interpretation of the thermal emission probability measurements. It is concluded that the contribution of the capture process if properly taken into account proves the validity of the Poole-Frenkel model of the electric field dependence.

Narrative