Titlebook: New Developments in Semiconductor Physics; Proceedings of the T G. Ferenczi,F. Beleznay Conference proceedings 1988 Springer-Verlag Berlin

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Lawrence C. Snyder,James W. Corbett,Peter Deák,Rongzhi Wu

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H. G. Grimmeiss,M. Kleverman,K. Bergman,L. Montelius

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Band-edge offsets in semiconductor heterojunctions,ion-metal-energy level alignment and experimental results of BEO‘s in binary and ternary III–V compounds a level order of valence-band edges in these compounds is proposed. The importance of a fixed reference level formed by transitions metals in the semiconductor is emphasized and recently reported

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Theory of the energy loss rate of hot electrons in 2D systems,

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Formation of ribbon-like defects during low-temperature annealing of Czochralski-grown silicon,

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The diffusion and electronic structure of hydrogen in silicon,

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