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Titlebook: Nanoscale Phenomena in Ferroelectric Thin Films; Seungbum Hong Book 2004 Springer Science+Business Media New York 2004 adsorption.fatigue.

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書目名稱Nanoscale Phenomena in Ferroelectric Thin Films
編輯Seungbum Hong
視頻videohttp://file.papertrans.cn/661/660947/660947.mp4
叢書名稱Multifunctional Thin Film Series
圖書封面Titlebook: Nanoscale Phenomena in Ferroelectric Thin Films;  Seungbum Hong Book 2004 Springer Science+Business Media New York 2004 adsorption.fatigue.
描述This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. It comprises two main parts, i.e. electrical characterization in nanoscale ferroelectric capacitor, and nano domain manipulation and visualization in ferroelectric materials. Well- known le‘adingexperts both in relevant academia and industry over the world (U.S., Japan, Germany, Switzerland, Korea) were invited to contribute to each chapter. The first part under the title of electrical characterization in nanoscale ferroelectric capacitors starts with Chapter 1, "Testing and characterization of ferroelectric thin film capacitors," written by Dr. I. K. Yoo. The author provides a comprehensive review on basic concepts and terminologies of ferroelectric properties and their testing methods. This chapter also covers reliability issues in FeRAMs that are crucial for commercialization of high- density memory products. In Chapter 2, "Size effects in ferroelectric film capacitors: role ofthe film thickness and capacitor size," Dr. I. Stolichnov discusses the size effects both in in-plane and out-of-plane dimensions of the ferroelectric thin film. The author successfully rel
出版日期Book 2004
關鍵詞adsorption; fatigue; film; German; nano-scale; platinum; silicon; Sorption; structure; surface; thermodynamics
版次1
doihttps://doi.org/10.1007/978-1-4419-9044-0
isbn_softcover978-1-4613-4771-2
isbn_ebook978-1-4419-9044-0
copyrightSpringer Science+Business Media New York 2004
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Ferroelectric Thin Films for Memory Applications: Nanoscale Characterization by Scanning Force Microapacitor variability of switching parameters has been used to predict the grain size limit to sustain a required level of performance reliability of memory devices. Special attention is given to investigation of the microscopic mechanisms of polarization decay (retention loss) and dielectric breakdown.
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Nanoscale Investigation of MOCVD- Pb(Zr,Ti)O3 Thin Films Using Scanning Probe Microscopyation switching processes in epitaxial PZT thin films and capacitors. They are investigated using atomic force microscopy (AFM), transmission electron microscopy (TEM), conductive AFM and piezoresponse scanning force microscopy (PFM).
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