Titlebook: Nanoscale Phenomena in Ferroelectric Thin Films; Seungbum Hong Book 2004 Springer Science+Business Media New York 2004 adsorption.fatigue.

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Nanoscale Domain Dynamics in Ferroelectric Thin Filmsation of the longitudinal piezoelectric constant (d.) in nanoscale capacitors (or islands) of various PZT compositions is elucidated. We show that by altering the electromechanical interplay between the substrate and the ferroelectric thin film, in compositions closer to the morphotropic phase bound

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Domain Switching and Self- Polarization in Perovskite Thin Filmsg the downwards polarization more favorable than the upwards polarization in c-domains. A model of self polarization in thin films and bulk crystals of perovskite structure on the basis of XPS, SIMS, X-Ray, AFM data is proposed.

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Dynamic-Contact Electrostatic Force Microscopy and its Application to Ferroelectric Domainp. The observed surface charge density of the TGS single crystal reveals different polarization charge densities depending on the exposed layer. A deterministic domain formation is also observed. The crystallographic defect such as twin boundaries behaves as the natural domain boundary for TGS. Patt

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commercialization of high- density memory products. In Chapter 2, "Size effects in ferroelectric film capacitors: role ofthe film thickness and capacitor size," Dr. I. Stolichnov discusses the size effects both in in-plane and out-of-plane dimensions of the ferroelectric thin film. The author successfully rel978-1-4613-4771-2978-1-4419-9044-0

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ed, giving insight into the bounds of the closed loop states. The extension to the time-varying plants is considered next, where cost detectability is shown to hold under modified conditions, and an upper bound on the number of switches over an arbitrary time period is derived.