Titlebook: Nanometer Variation-Tolerant SRAM; Circuits and Statist Mohamed H. Abu-Rahma,Mohab Anis Book 2013 Springer Science+Business Media New York

persistence

Introduction,In this chapter, we give a short introduction on the importance of variation-tolerant SRAM design for the nanometer regime.

閑逛

允許

iations and how they affect circuit and system performance, .Variability is one of the most challenging obstacles for IC design in the nanometer regime.? In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravate

厚顏無(wú)恥

A Methodology for Statistical Estimation of Read Access Yield in SRAMs,robability, including both conventional and state-of-the-art approaches. As an application of SRAM statistical simulation techniques, we present a methodology for statistical simulation of SRAM read access yield, which is tightly related to SRAM performance and power consumption.

博愛(ài)家

Basal-Ganglia

未開化

急急忙忙

殺人

Book 2013e review of state-of-the-art, variation-tolerant SRAM circuit techniques; .Discusses Impact of device related process variations and how they affect circuit and system performance, from a design point of view;.Helps designers optimize memory yield, with practical statistical design methodologies and

獎(jiǎng)牌