找回密碼
 To register

QQ登錄

只需一步,快速開始

掃一掃,訪問微社區(qū)

打印 上一主題 下一主題

Titlebook: Nanometer Variation-Tolerant SRAM; Circuits and Statist Mohamed H. Abu-Rahma,Mohab Anis Book 2013 Springer Science+Business Media New York

[復制鏈接]
查看: 22018|回復: 35
樓主
發(fā)表于 2025-3-21 18:16:40 | 只看該作者 |倒序瀏覽 |閱讀模式
書目名稱Nanometer Variation-Tolerant SRAM
副標題Circuits and Statist
編輯Mohamed H. Abu-Rahma,Mohab Anis
視頻videohttp://file.papertrans.cn/661/660849/660849.mp4
概述Provides comprehensive review of state-of-the-art, variation-tolerant SRAM circuit techniques.Discusses Impact of device related process variations and how they affect circuit and system performance,
圖書封面Titlebook: Nanometer Variation-Tolerant SRAM; Circuits and Statist Mohamed H. Abu-Rahma,Mohab Anis Book 2013 Springer Science+Business Media New York
描述.Variability is one of the most challenging obstacles for IC design in the nanometer regime.? In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost, while achieving higher performance and density.? With the drastic increase in memory densities, lower supply voltages, and higher variations, statistical simulation methodologies become imperative to estimate memory yield and optimize performance and power..This book. .is an invaluable reference on robust SRAM circuits and statistical design methodologies for researchers and practicing engineers in the field of memory design. It combines state of the art circuit techniques and statistical methodologies to optimize. .SRAM performance and yield in nanometer technologies. ?.Provides comprehensive review of state-of-the-art, variation-tolerant SRAM circuit techniques; .Discusses Impact of device related process variations and how they affect circuit and system performance, from a design point of view;.Helps designers optimize memory yield, with practical statistical design methodologies and
出版日期Book 2013
關(guān)鍵詞Embedded Systems; Integrated Circuit Design; Integrated Circuit Variability; Reliable Integrated Circui
版次1
doihttps://doi.org/10.1007/978-1-4614-1749-1
isbn_softcover978-1-4939-0220-0
isbn_ebook978-1-4614-1749-1
copyrightSpringer Science+Business Media New York 2013
The information of publication is updating

書目名稱Nanometer Variation-Tolerant SRAM影響因子(影響力)




書目名稱Nanometer Variation-Tolerant SRAM影響因子(影響力)學科排名




書目名稱Nanometer Variation-Tolerant SRAM網(wǎng)絡(luò)公開度




書目名稱Nanometer Variation-Tolerant SRAM網(wǎng)絡(luò)公開度學科排名




書目名稱Nanometer Variation-Tolerant SRAM被引頻次




書目名稱Nanometer Variation-Tolerant SRAM被引頻次學科排名




書目名稱Nanometer Variation-Tolerant SRAM年度引用




書目名稱Nanometer Variation-Tolerant SRAM年度引用學科排名




書目名稱Nanometer Variation-Tolerant SRAM讀者反饋




書目名稱Nanometer Variation-Tolerant SRAM讀者反饋學科排名




單選投票, 共有 1 人參與投票
 

1票 100.00%

Perfect with Aesthetics

 

0票 0.00%

Better Implies Difficulty

 

0票 0.00%

Good and Satisfactory

 

0票 0.00%

Adverse Performance

 

0票 0.00%

Disdainful Garbage

您所在的用戶組沒有投票權(quán)限
沙發(fā)
發(fā)表于 2025-3-21 21:19:45 | 只看該作者
板凳
發(fā)表于 2025-3-22 03:13:33 | 只看該作者
Variation-Tolerant SRAM Write and Read Assist Techniques,overhead. In the last few years, there has been extensive research in this area to help overcome the SRAM stability challenges. In this chapter, we start by defining the various metrics used to analyze write and read stability. These metrics are critical in the evaluation of SRAM stability and the e
地板
發(fā)表于 2025-3-22 07:15:05 | 只看該作者
5#
發(fā)表于 2025-3-22 09:08:02 | 只看該作者
A Methodology for Statistical Estimation of Read Access Yield in SRAMs,ility for SRAM brings many challenges to memory designers. In this chapter, we look at the different statistical techniques used to estimate failure probability, including both conventional and state-of-the-art approaches. As an application of SRAM statistical simulation techniques, we present a met
6#
發(fā)表于 2025-3-22 16:21:42 | 只看該作者
7#
發(fā)表于 2025-3-22 21:01:24 | 只看該作者
8#
發(fā)表于 2025-3-22 22:15:45 | 只看該作者
9#
發(fā)表于 2025-3-23 03:01:21 | 只看該作者
http://image.papertrans.cn/n/image/660849.jpg
10#
發(fā)表于 2025-3-23 08:18:59 | 只看該作者
 關(guān)于派博傳思  派博傳思旗下網(wǎng)站  友情鏈接
派博傳思介紹 公司地理位置 論文服務(wù)流程 影響因子官網(wǎng) 吾愛論文網(wǎng) 大講堂 北京大學 Oxford Uni. Harvard Uni.
發(fā)展歷史沿革 期刊點評 投稿經(jīng)驗總結(jié) SCIENCEGARD IMPACTFACTOR 派博系數(shù) 清華大學 Yale Uni. Stanford Uni.
QQ|Archiver|手機版|小黑屋| 派博傳思國際 ( 京公網(wǎng)安備110108008328) GMT+8, 2025-10-7 11:14
Copyright © 2001-2015 派博傳思   京公網(wǎng)安備110108008328 版權(quán)所有 All rights reserved
快速回復 返回頂部 返回列表
加查县| 琼海市| 巧家县| 民丰县| 横山县| 泸州市| 平舆县| 丁青县| 蕲春县| 木里| 屏东市| 蒙城县| 南皮县| 镇远县| 大城县| 集贤县| 青阳县| 凤城市| 民权县| 天等县| 湖南省| 辽阳市| 关岭| 偏关县| 武隆县| 昭苏县| 乡城县| 松江区| 马尔康县| 湘西| 乌鲁木齐县| 瑞安市| 平原县| 洛宁县| 万年县| 于田县| 集贤县| 临颍县| 二手房| 什邡市| 海原县|