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Titlebook: Nanolithography; A Borderland between M. Gentili,C. Giovannella,S. Selci Book 1994 Springer Science+Business Media Dordrecht 1994 AES.PAS.P

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樓主: advocate
31#
發(fā)表于 2025-3-26 22:35:42 | 只看該作者
Direct Writing with a Combined STM/SEM Systemde it possible to measure the electrical properties of narrow nickel wires, which is the first four-point measurement of a structure made by STM. The work of other groups in this field will also be reviewed briefly.
32#
發(fā)表于 2025-3-27 03:07:58 | 只看該作者
33#
發(fā)表于 2025-3-27 06:19:26 | 只看該作者
Electron Beam Resists and Pattern Transfer Methodse directly via a personal computer (PC). For this reason the paper will focus on electron beam microfabrication, although many processes are common to other forms of radiation such as UV light. X-rays or ion beams.
34#
發(fā)表于 2025-3-27 10:57:41 | 只看該作者
Direct Writing of Nanoscale Patterns in SiO2ctly write nanoscale patterns in it should enhance the fabrication techniques for ultra-small devices. In this paper, we review the results to date, and compare the SiO. process with other nanolithography techniques.
35#
發(fā)表于 2025-3-27 15:20:29 | 只看該作者
36#
發(fā)表于 2025-3-27 20:50:08 | 只看該作者
37#
發(fā)表于 2025-3-27 23:18:31 | 只看該作者
Fabrication of Ultrasmall InGaAs/InP Nanostructures by High Voltage Electron Beam Lithography and We wires, which is in contrast to previous studies on dry-etched structures. The photoluminescence energy of the In.Ga.As/InP wires is independent of the wire dimension down to widths of 50 nm. For wires with smaller widths an increasing blue shift of photoluminescence energy up to 60 meV is observed displaying strong lateral quantization effects.
38#
發(fā)表于 2025-3-28 02:48:38 | 只看該作者
39#
發(fā)表于 2025-3-28 06:40:37 | 只看該作者
Low Voltage e-Beam Lithography with the Scanning Tunneling Microscope based lithography, ultra thin resist films are essential. The deposition of such films using self-assembling organosilanes is described. Where the organic group is benzyl methyl chloride, the resist layer can be patterned with electrons down to 4 eV in energy. The viability of a proximal probe based lithographic technology is discussed.
40#
發(fā)表于 2025-3-28 11:28:17 | 只看該作者
Book 1994lithography. ..Nanolithography. contains updated reviews by major experts on thewell established techniques -- electron beam lithography (EBL), X-raylithography (XRL), ion beam lithography (IBL) -- as well as onemergent techniques, such as scanning tunnelling lithography (STL)..
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