Titlebook: Microscopy of Semiconducting Materials; Proceedings of the 1 A. G. Cullis,J. L. Hutchison Conference proceedings 20051st edition Springer-V

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Oxygen segregation to nanopipes in gallium nitridelectron energy loss spectroscopy in the Daresbury SuperSTEM is used to investigate the core structure and composition of open core dislocations (nanopipes) in GaN films grown by hydride vapour phase epitaxy. The results show evidence for segregation of oxygen to the nanopipe surfaces. Quantitative a

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Characterization and structuring of nitride-based heterostructures for vertical-cavity surface-emittsmission electron microscopy. These layers consisted of multiple stacks of GaN layers in conjunction with a superlattice of alternate layers of AlN and GaN or — in order to reduce tensile strain — a superlattice of AlN and In.Ga.N with x = 0.25. The AlN/GaN-based superlattice showed cracks and a hig

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Characterization of defects in ZnS and GaNctures, making it potentially useful as a nanoscale component in electronic devices. Since the properties of nanoscale materials typically differ from those of their bulk counterparts, a fundamental understanding of the structure of the ZnS nanostructures is essential, particularly since they contai