Titlebook: Microscopy of Semiconducting Materials; Proceedings of the 1 A. G. Cullis,J. L. Hutchison Conference proceedings 20051st edition Springer-V

gloomy

書目名稱Microscopy of Semiconducting Materials影響因子(影響力)




書目名稱Microscopy of Semiconducting Materials影響因子(影響力)學(xué)科排名




書目名稱Microscopy of Semiconducting Materials網(wǎng)絡(luò)公開度




書目名稱Microscopy of Semiconducting Materials網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Microscopy of Semiconducting Materials被引頻次




書目名稱Microscopy of Semiconducting Materials被引頻次學(xué)科排名




書目名稱Microscopy of Semiconducting Materials年度引用




書目名稱Microscopy of Semiconducting Materials年度引用學(xué)科排名




書目名稱Microscopy of Semiconducting Materials讀者反饋




書目名稱Microscopy of Semiconducting Materials讀者反饋學(xué)科排名

STALL

愉快么

祖?zhèn)髫?cái)產(chǎn)

恭維

致命

Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changesity and the wetting layer thickness with growth time have been studied. The nanostructure density was found to saturate with increasing growth time, but unexpectedly, the nanostructure size was also seen to stabilise. We have used high-resolution transmission electron microscopy (HRTEM) to further i

PRE

cultivated

In GaN-GaN quantum wells: their luminescent and nano-structural propertiesectra of single quantum wells show an excitonic emission mechanism that is localised on a length scale of 12–30?. Using high-resolution STEM high-angle annular dark field imaging we have looked for nano-structural features in high-indium content multiple and single quantum wells. We find the existen

ARC

心痛