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Titlebook: Metal-Dielectric Interfaces in Gigascale Electronics; Thermal and Electric Ming He,Toh-Ming Lu Book 2012 Springer Science+Business Media, L

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書目名稱Metal-Dielectric Interfaces in Gigascale Electronics
副標(biāo)題Thermal and Electric
編輯Ming He,Toh-Ming Lu
視頻videohttp://file.papertrans.cn/632/631480/631480.mp4
概述Presents a unified approach to understanding the diverse phenomena observed at metal-dielectric interfaces.Features fundamental considerations in the physics and chemistry of metal-dielectric interact
叢書名稱Springer Series in Materials Science
圖書封面Titlebook: Metal-Dielectric Interfaces in Gigascale Electronics; Thermal and Electric Ming He,Toh-Ming Lu Book 2012 Springer Science+Business Media, L
描述.Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying ?the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate ?interface phenomena and the principles that govern them. .Metal-Dielectric Interfaces in Gigascale Electronics. ?provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric interfaces. The goal is to provide readers with a clear account of the relationship between interface science and its applications in interconnect structures. The material prese
出版日期Book 2012
關(guān)鍵詞Cu interconnect technology; Flatband voltage shifts in metal-dielectric-; Fundamental science metal-di
版次1
doihttps://doi.org/10.1007/978-1-4614-1812-2
isbn_softcover978-1-4939-4308-1
isbn_ebook978-1-4614-1812-2Series ISSN 0933-033X Series E-ISSN 2196-2812
issn_series 0933-033X
copyrightSpringer Science+Business Media, LLC 2012
The information of publication is updating

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Cu-Dielectric Interfaces, In the dual damascene interconnect structure, Cu interconnects are surrounded by various barriers. The Cu lines are capped with a dielectric layer of materials, which is used as a diffusion barrier and an etch-stop layer. Cu migration through the capping layer is an increasingly serious concern bec
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,Barrier Metal–Dielectric Interfaces,nd drift into interlayer dielectrics. These barriers can also block oxygen/moisture penetration from the dielectrics into the Cu lines, preventing the oxidation of Cu, which can be the source of Cu ions.
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ns, especially but not only in developing countries, intensify. Therefore, there is an increasing need to search for integrated solutions to make development more sustainable.?The United Nations has acknowledged the problem?and approved the “2030 Agenda for Sustainable Development”. On 1st January 2
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Ming He,Toh-Ming Luns, especially but not only in developing countries, intensify. Therefore, there is an increasing need to search for integrated solutions to make development more sustainable.?The United Nations has acknowledged the problem?and approved the “2030 Agenda for Sustainable Development”. On 1st January 2
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