找回密碼
 To register

QQ登錄

只需一步,快速開始

掃一掃,訪問(wèn)微社區(qū)

打印 上一主題 下一主題

Titlebook: Low Power and Reliable SRAM Memory Cell and Array Design; Koichiro Ishibashi,Kenichi Osada Book 2011 Springer-Verlag Berlin Heidelberg 201

[復(fù)制鏈接]
查看: 49920|回復(fù): 35
樓主
發(fā)表于 2025-3-21 19:51:10 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書目名稱Low Power and Reliable SRAM Memory Cell and Array Design
編輯Koichiro Ishibashi,Kenichi Osada
視頻videohttp://file.papertrans.cn/589/588806/588806.mp4
概述Basic book on memory design.Combines the aspects of SRAM technique, analysis and design.A valuable reference work for researchers and engineers alike.Includes supplementary material:
叢書名稱Springer Series in Advanced Microelectronics
圖書封面Titlebook: Low Power and Reliable SRAM Memory Cell and Array Design;  Koichiro Ishibashi,Kenichi Osada Book 2011 Springer-Verlag Berlin Heidelberg 201
描述Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
出版日期Book 2011
關(guān)鍵詞CMOS LSI; Memory cell; Reliability; SRAM; Study
版次1
doihttps://doi.org/10.1007/978-3-642-19568-6
isbn_softcover978-3-642-27018-5
isbn_ebook978-3-642-19568-6Series ISSN 1437-0387 Series E-ISSN 2197-6643
issn_series 1437-0387
copyrightSpringer-Verlag Berlin Heidelberg 2011
The information of publication is updating

書目名稱Low Power and Reliable SRAM Memory Cell and Array Design影響因子(影響力)




書目名稱Low Power and Reliable SRAM Memory Cell and Array Design影響因子(影響力)學(xué)科排名




書目名稱Low Power and Reliable SRAM Memory Cell and Array Design網(wǎng)絡(luò)公開度




書目名稱Low Power and Reliable SRAM Memory Cell and Array Design網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Low Power and Reliable SRAM Memory Cell and Array Design被引頻次




書目名稱Low Power and Reliable SRAM Memory Cell and Array Design被引頻次學(xué)科排名




書目名稱Low Power and Reliable SRAM Memory Cell and Array Design年度引用




書目名稱Low Power and Reliable SRAM Memory Cell and Array Design年度引用學(xué)科排名




書目名稱Low Power and Reliable SRAM Memory Cell and Array Design讀者反饋




書目名稱Low Power and Reliable SRAM Memory Cell and Array Design讀者反饋學(xué)科排名




單選投票, 共有 0 人參與投票
 

0票 0%

Perfect with Aesthetics

 

0票 0%

Better Implies Difficulty

 

0票 0%

Good and Satisfactory

 

0票 0%

Adverse Performance

 

0票 0%

Disdainful Garbage

您所在的用戶組沒(méi)有投票權(quán)限
沙發(fā)
發(fā)表于 2025-3-21 22:07:01 | 只看該作者
Low Power and Reliable SRAM Memory Cell and Array Design978-3-642-19568-6Series ISSN 1437-0387 Series E-ISSN 2197-6643
板凳
發(fā)表于 2025-3-22 00:49:03 | 只看該作者
地板
發(fā)表于 2025-3-22 08:32:20 | 只看該作者
Springer Series in Advanced Microelectronicshttp://image.papertrans.cn/l/image/588806.jpg
5#
發(fā)表于 2025-3-22 12:46:30 | 只看該作者
6#
發(fā)表于 2025-3-22 16:37:51 | 只看該作者
7#
發(fā)表于 2025-3-22 20:47:54 | 只看該作者
8#
發(fā)表于 2025-3-23 00:09:07 | 只看該作者
Koichiro Ishibashirecognized he was often giving the ‘intellectual history’ of words, a ‘genealogy of sentiments’.. Combining the Renaissance demand that a dictionary be instructive with the Lockean theory of language left the dictionary as a book of books in a new sense; it became a record of the way previous books
9#
發(fā)表于 2025-3-23 03:54:45 | 只看該作者
10#
發(fā)表于 2025-3-23 06:36:54 | 只看該作者
 關(guān)于派博傳思  派博傳思旗下網(wǎng)站  友情鏈接
派博傳思介紹 公司地理位置 論文服務(wù)流程 影響因子官網(wǎng) 吾愛(ài)論文網(wǎng) 大講堂 北京大學(xué) Oxford Uni. Harvard Uni.
發(fā)展歷史沿革 期刊點(diǎn)評(píng) 投稿經(jīng)驗(yàn)總結(jié) SCIENCEGARD IMPACTFACTOR 派博系數(shù) 清華大學(xué) Yale Uni. Stanford Uni.
QQ|Archiver|手機(jī)版|小黑屋| 派博傳思國(guó)際 ( 京公網(wǎng)安備110108008328) GMT+8, 2025-10-6 09:25
Copyright © 2001-2015 派博傳思   京公網(wǎng)安備110108008328 版權(quán)所有 All rights reserved
快速回復(fù) 返回頂部 返回列表
交城县| 时尚| 瓮安县| 定兴县| 冀州市| 徐水县| 姚安县| 兖州市| 桐庐县| 礼泉县| 寿光市| 临沂市| 剑河县| 安溪县| 巫山县| 邢台市| 秭归县| 朔州市| 泾川县| 公安县| 武定县| 泽库县| 通海县| 凤庆县| 尖扎县| 海口市| 陆丰市| 建阳市| 奉化市| 专栏| 定襄县| 泰宁县| 奎屯市| 马鞍山市| 东源县| 镇原县| 海晏县| 西宁市| 富民县| 绥江县| 定南县|