書目名稱 | Low Power and Reliable SRAM Memory Cell and Array Design |
編輯 | Koichiro Ishibashi,Kenichi Osada |
視頻video | http://file.papertrans.cn/589/588806/588806.mp4 |
概述 | Basic book on memory design.Combines the aspects of SRAM technique, analysis and design.A valuable reference work for researchers and engineers alike.Includes supplementary material: |
叢書名稱 | Springer Series in Advanced Microelectronics |
圖書封面 |  |
描述 | Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design. |
出版日期 | Book 2011 |
關鍵詞 | CMOS LSI; Memory cell; Reliability; SRAM; Study |
版次 | 1 |
doi | https://doi.org/10.1007/978-3-642-19568-6 |
isbn_softcover | 978-3-642-27018-5 |
isbn_ebook | 978-3-642-19568-6Series ISSN 1437-0387 Series E-ISSN 2197-6643 |
issn_series | 1437-0387 |
copyright | Springer-Verlag Berlin Heidelberg 2011 |