Titlebook: Ion Implantation in Semiconductors and Other Materials; Billy L. Crowder Book 1973 Plenum Press, New York 1973 Plantation.corrosion.crysta

披肩

Radiation Damage in Metals and Semiconductors most thoroughly investigated materials (i.e., fee metals and elemental semiconductors) center around the nature of the self-interstitials. Theoretical reasons for the complex behaviour of these defects are discussed. An interpretation for radiation damage annealing in silicon is suggested.

Hallowed

Strain Induced Effects on EPR Centers in Silicon Generated By P+ Ion Implantation in the amorphous region. At the stopping region of the implanted ions which is around Rp, an increase in the .-value was observed. It can be interpreted that strains caused by the stresses which the implanted ions exert on the surrounding lattice induce that effect.

foppish

Defect Aggregation in Ion-Implanted GaAs, flux, and ion-implantation temperatures lends strong support to a model for which scattering and absorption is due to the formation of metallic-like defect aggregates. This dependence is not observed for low fluence Xe. ion implantation or for heavy proton implantation.

condone

Internal Friction Study of Point Defects in Boron-Implanted Silicons from a separate species of point defect. From information on the Symmetry, reorientation kinetics and annealing behavior of the defects, it is concluded that the defects consist of boron and silicon interstitials. Specific assignments are proposed for the atomic configuration and charge state of the defects.

BALE

978-1-4684-2066-1Plenum Press, New York 1973

AVOW

影響帶來

https://doi.org/10.1007/978-1-4684-2064-7Plantation; corrosion; crystal; diffusion; electroluminescence; metals; paper; semiconductor

Amorous

Stress

pulmonary