找回密碼
 To register

QQ登錄

只需一步,快速開(kāi)始

掃一掃,訪問(wèn)微社區(qū)

打印 上一主題 下一主題

Titlebook: Ion Implantation in Semiconductors and Other Materials; Billy L. Crowder Book 1973 Plenum Press, New York 1973 Plantation.corrosion.crysta

[復(fù)制鏈接]
查看: 36274|回復(fù): 55
樓主
發(fā)表于 2025-3-21 17:46:16 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書(shū)目名稱(chēng)Ion Implantation in Semiconductors and Other Materials
編輯Billy L. Crowder
視頻videohttp://file.papertrans.cn/476/475176/475176.mp4
叢書(shū)名稱(chēng)The IBM Research Symposia Series
圖書(shū)封面Titlebook: Ion Implantation in Semiconductors and Other Materials;  Billy L. Crowder Book 1973 Plenum Press, New York 1973 Plantation.corrosion.crysta
描述During the years since the first conference in this series was held at Thousand Oaks, California, in 1970, ion implantation has been an expanding and exciting research area. The advances in this field were so rapid that a second conference convened at Garmisch- Partenkirchen, Germany, in 1971. At the present time, our under- standing of the ion implantation process in semiconductors such as Si and Ge has reached a stage of maturity and ion implantation techniques are firmly established in semiconductor device technology. The advances in compound semiconductors have not been as rapid. There has also been a shift in emphasis in ion implanta- tion research from semiconductors to other materials such as metals and insulators. It was appropriate to increase the scope of the conference and the IIIrd International Conference on Ion Implanta- tion in Semiconductors and Other Materials was held at Yorktown Heights, New York, December 11 to 14, 1972. A significant number of the papers presented at this conference dealt with ion implanta- tion in metals, insulators, and compound semiconductors. The International Committee responsible for organizing this conference consisted of B. L. Crowder,
出版日期Book 1973
關(guān)鍵詞Plantation; corrosion; crystal; diffusion; electroluminescence; metals; paper; semiconductor
版次1
doihttps://doi.org/10.1007/978-1-4684-2064-7
isbn_softcover978-1-4684-2066-1
isbn_ebook978-1-4684-2064-7
copyrightPlenum Press, New York 1973
The information of publication is updating

書(shū)目名稱(chēng)Ion Implantation in Semiconductors and Other Materials影響因子(影響力)




書(shū)目名稱(chēng)Ion Implantation in Semiconductors and Other Materials影響因子(影響力)學(xué)科排名




書(shū)目名稱(chēng)Ion Implantation in Semiconductors and Other Materials網(wǎng)絡(luò)公開(kāi)度




書(shū)目名稱(chēng)Ion Implantation in Semiconductors and Other Materials網(wǎng)絡(luò)公開(kāi)度學(xué)科排名




書(shū)目名稱(chēng)Ion Implantation in Semiconductors and Other Materials被引頻次




書(shū)目名稱(chēng)Ion Implantation in Semiconductors and Other Materials被引頻次學(xué)科排名




書(shū)目名稱(chēng)Ion Implantation in Semiconductors and Other Materials年度引用




書(shū)目名稱(chēng)Ion Implantation in Semiconductors and Other Materials年度引用學(xué)科排名




書(shū)目名稱(chēng)Ion Implantation in Semiconductors and Other Materials讀者反饋




書(shū)目名稱(chēng)Ion Implantation in Semiconductors and Other Materials讀者反饋學(xué)科排名




單選投票, 共有 0 人參與投票
 

0票 0%

Perfect with Aesthetics

 

0票 0%

Better Implies Difficulty

 

0票 0%

Good and Satisfactory

 

0票 0%

Adverse Performance

 

0票 0%

Disdainful Garbage

您所在的用戶組沒(méi)有投票權(quán)限
沙發(fā)
發(fā)表于 2025-3-22 00:13:08 | 只看該作者
Concentration Profiles of Arsenic Implanted in Silicon. The nearly gaussian components agree with the prediction by the LSS theory. The exponential shape was not observed in heavily damaged silicon. The slope of the exponential tail is independent of a dose, substrate temperature and ion energy. It is proposed that this tail is caused by a rapid diffusion process such as interstitial diffusion.
板凳
發(fā)表于 2025-3-22 02:27:12 | 只看該作者
地板
發(fā)表于 2025-3-22 08:22:59 | 只看該作者
5#
發(fā)表于 2025-3-22 09:19:46 | 只看該作者
6#
發(fā)表于 2025-3-22 14:21:41 | 只看該作者
The Effect of Ion Implantation on the Lattice Location of Arsenic in Arsenic — Doped Siof diffusing distances greater than lμm before causing the off site movement of an arsenic atom. Annealing of the tellurium bombarded samples to 700 to 800°C restores most of the off site arsenic to substitutional positions in the lattice.
7#
發(fā)表于 2025-3-22 18:44:02 | 只看該作者
Experimental Analysis of Concentration Profiles of Boron Implanted in Siliconh as temperature, crystal direction, crystal perfection. The boron profiles in amorphous silicon were compared with theory. Another aspect studied is the profile distortion due to heat treatments. By comparison of the boron profiles with corresponding electrical profiles valuable additional information was obtained.
8#
發(fā)表于 2025-3-23 00:23:32 | 只看該作者
nding and exciting research area. The advances in this field were so rapid that a second conference convened at Garmisch- Partenkirchen, Germany, in 1971. At the present time, our under- standing of the ion implantation process in semiconductors such as Si and Ge has reached a stage of maturity and
9#
發(fā)表于 2025-3-23 04:56:58 | 只看該作者
Calorimetric Determination of Optical Absorption in Proton-Bombarded GaAsn the square of the photon energy has been observed in other measurements for high fluence Xe ion implantation. Seventy percent of the proton-induced attenuation anneals below 300°C in agreement with previously measured neutron-induced optical attenuation.
10#
發(fā)表于 2025-3-23 07:59:24 | 只看該作者
 關(guān)于派博傳思  派博傳思旗下網(wǎng)站  友情鏈接
派博傳思介紹 公司地理位置 論文服務(wù)流程 影響因子官網(wǎng) 吾愛(ài)論文網(wǎng) 大講堂 北京大學(xué) Oxford Uni. Harvard Uni.
發(fā)展歷史沿革 期刊點(diǎn)評(píng) 投稿經(jīng)驗(yàn)總結(jié) SCIENCEGARD IMPACTFACTOR 派博系數(shù) 清華大學(xué) Yale Uni. Stanford Uni.
QQ|Archiver|手機(jī)版|小黑屋| 派博傳思國(guó)際 ( 京公網(wǎng)安備110108008328) GMT+8, 2026-2-9 12:05
Copyright © 2001-2015 派博傳思   京公網(wǎng)安備110108008328 版權(quán)所有 All rights reserved
快速回復(fù) 返回頂部 返回列表
宣化县| 环江| 濮阳市| 高尔夫| 江达县| 河源市| 蕉岭县| 保靖县| 嵊泗县| 株洲县| 杂多县| 陇西县| 临沭县| 山阴县| 洛川县| 林甸县| 红河县| 阳高县| 萍乡市| 广河县| 将乐县| 雷波县| 伊宁县| 鹿邑县| 丰都县| 三都| 修水县| 大荔县| 田林县| 柯坪县| 永康市| 长岛县| 保德县| 广宁县| 南雄市| 平远县| 五指山市| 化州市| 东明县| 上林县| 兴安县|