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Titlebook: Hot-Carrier Reliability of MOS VLSI Circuits; Yusuf Leblebici,Sung-Mo (Steve) Kang Book 1993 Springer Science+Business Media New York 1993

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發(fā)表于 2025-3-23 13:21:29 | 只看該作者
Yusuf Leblebici,Sung-Mo (Steve) Kangsted various caregiving-related negative experiences might be related to older spousal caregivers’ mental health status, the components of psychological well-being (PSW) among older spousal caregivers have not been fully explored. This study examined the association between spousal caregiver status
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發(fā)表于 2025-3-23 17:13:56 | 只看該作者
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發(fā)表于 2025-3-23 21:33:44 | 只看該作者
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發(fā)表于 2025-3-24 05:02:27 | 只看該作者
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發(fā)表于 2025-3-24 07:02:52 | 只看該作者
Yusuf Leblebici,Sung-Mo (Steve) Kangf elder abuse, which creates new challenges in the form of the indirect and direct victimization of children in the home. However, research on the relationship between children’s witnessing of elder abuse and their victimization experiences is limited. This study examines the physical and mental hea
17#
發(fā)表于 2025-3-24 13:39:47 | 只看該作者
Yusuf Leblebici,Sung-Mo (Steve) Kangf elder abuse, which creates new challenges in the form of the indirect and direct victimization of children in the home. However, research on the relationship between children’s witnessing of elder abuse and their victimization experiences is limited. This study examines the physical and mental hea
18#
發(fā)表于 2025-3-24 18:11:40 | 只看該作者
ers in debugging issues related to program correctness. The motivation is twofold. First, researchers widely use computation graphs to analyze dynamic program behavior. Second, most past work focused on visualizing performance bottlenecks rather than correctness issues. This paper’s contributions ar
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發(fā)表于 2025-3-24 21:53:22 | 只看該作者
Oxide Degradation Mechanisms in MOS Transistors,ation of the oxide damage, the dependence of the degradation mechanisms upon various operating conditions and temperature, and the effects of the oxide damage upon device characteristics, will also be examined. Most of the following discussion is focussed on nMOS transistors, for which the hot-carri
20#
發(fā)表于 2025-3-25 00:27:28 | 只看該作者
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