| 書目名稱 | Hot-Carrier Reliability of MOS VLSI Circuits |
| 編輯 | Yusuf Leblebici,Sung-Mo (Steve) Kang |
| 視頻video | http://file.papertrans.cn/429/428461/428461.mp4 |
| 叢書名稱 | The Springer International Series in Engineering and Computer Science |
| 圖書封面 |  |
| 描述 | As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada- tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down- ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucia |
| 出版日期 | Book 1993 |
| 關(guān)鍵詞 | Leistungsfeldeffekttransistor; MOSFET; VLSI; circuit; diagnosis; field-effect transistor; metal oxide semi |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-1-4615-3250-7 |
| isbn_softcover | 978-1-4613-6429-0 |
| isbn_ebook | 978-1-4615-3250-7Series ISSN 0893-3405 |
| issn_series | 0893-3405 |
| copyright | Springer Science+Business Media New York 1993 |
|Archiver|手機(jī)版|小黑屋|
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