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Titlebook: Hot Carriers in Semiconductors; Karl Hess,Jean-Pierre Leburton,Umberto Ravaioli Book 1996 Plenum Press, New York 1996 Exciton.MOSFET.Semic

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樓主: Extraneous
11#
發(fā)表于 2025-3-23 13:08:20 | 只看該作者
12#
發(fā)表于 2025-3-23 17:38:18 | 只看該作者
Oscillatory Transport of Electrons in GaAs Surface-Space-Charge Fieldsing the electrostatic field in the surface depletion region. The electrons and holes move into opposite directions, thus reducing the driving force by building up an opposite electric field. As a consequence of the carrier seperation, the sign of the resulting electric field in the surface depletion
13#
發(fā)表于 2025-3-23 19:02:10 | 只看該作者
14#
發(fā)表于 2025-3-24 02:07:44 | 只看該作者
Hot Phonon Emission in a Double Barrier Heterostructureemitted by hot electrons provides a valuable tool for investigation of electron-phonon interactions in heterostructures.. We have studied the acoustic phonon emission by hot electrons in double barrier heterostructures. We have solved the electron kinetic equation to obtain the electron distribution
15#
發(fā)表于 2025-3-24 04:09:14 | 只看該作者
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發(fā)表于 2025-3-24 14:39:29 | 只看該作者
ed material properties or functionality. Often the metamaterial principles that underpin the physics of these systems rely on these resonant?elements being coupled to form some collective response: in this chapter we explore how resonant cavities can be utilised to form trapped acoustic surface wave
18#
發(fā)表于 2025-3-24 16:22:24 | 只看該作者
ubstrate. Through the computation of the acoustic band diagram and transmission spectra of periodic pillars arranged in different symmetries, we show that these structures possess acoustic metamaterial features for surface acoustic waves. The pillars on the top of the surface introduce new guided mo
19#
發(fā)表于 2025-3-24 20:35:52 | 只看該作者
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發(fā)表于 2025-3-25 02:56:28 | 只看該作者
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