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Titlebook: Hot Carriers in Semiconductors; Karl Hess,Jean-Pierre Leburton,Umberto Ravaioli Book 1996 Plenum Press, New York 1996 Exciton.MOSFET.Semic

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書目名稱Hot Carriers in Semiconductors
編輯Karl Hess,Jean-Pierre Leburton,Umberto Ravaioli
視頻videohttp://file.papertrans.cn/429/428431/428431.mp4
圖書封面Titlebook: Hot Carriers in Semiconductors;  Karl Hess,Jean-Pierre Leburton,Umberto Ravaioli Book 1996 Plenum Press, New York 1996 Exciton.MOSFET.Semic
描述This volume contains invited and contributed papers of the Ninth International Conference on Hot Carriers in Semiconductors (HCIS-9), held July 3 I-August 4, 1995 in Chicago, Illinois. In all, the conference featured 15 invited oral presentations, 60 contributed oral presentations, and 105 poster presentations, and an international contingent of 170 scientists. As in recent conferences, the main themes of the conference were related to nonlinear transport in semiconductor heterojunctions and included Bloch oscillations, laser diode structures, and femtosecond spectroscopy. Interesting questions related to nonlinear transport, size quantization, and intersubband scattering were addressed that are relevant to the new quantum cascade laser. Many lectures were geared toward quantum wires and dots and toward nanostructures and mesoscopic systems in general. It is expected that such research will open new horizons to nonlinear transport studies. An attempt was made by the program committee to increase the number of presen- tations related directly to devices. The richness of nonlocal hot electron effects that were discussed as a result, in our opinion, suggests that future conferences sh
出版日期Book 1996
關(guān)鍵詞Exciton; MOSFET; Semiconductor; electron transport; electrons; laser diode; online; semiconductors; simulati
版次1
doihttps://doi.org/10.1007/978-1-4613-0401-2
isbn_softcover978-1-4613-8035-1
isbn_ebook978-1-4613-0401-2
copyrightPlenum Press, New York 1996
The information of publication is updating

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Spin-flip Dynamics of Excitons in GaAs Quantum Wellsund state can have either total spin J=1 or J=2, since they are comprised of a spin-1/2 conduction electron and a spin-3/2 hole. While a number of studies have examined the flip from +1 to -1 spin states, little experimental work has directly addressed the processes by which J=2, or “dark,” excitons
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Dynamics of Exciton Formation and Relaxation in Semiconductorscrystal lattice. Simultaneously, electron-hole (e-h) pairs may undergo assisted transitions to excitonic bound states. These free excitons are created with large center-of-mass wave vectors, . to become optically active they have to be scattered into states with . ≈ 0 and s-symmetry by inelastic col
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Time-Resolved Studies of Intersubband Relaxation Using the free Electron Laserhere the intersubband spacing is smaller than the optical phonon energy, rather long lifetimes are expected, consistent with intersubband relaxation by acoustic phonon scattering and Auger processes. However, this has not always been found to be the case, and lifetimes ranging from 20ps. to 1.6ns. h
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Far-Infrared Modulated Photocurrent in GaAs/AlGaAs Coupled Quantum Well Tunnelling Structureser using free electron lasers., or more conventional sources.. In principle, these FIR studies are able to determine the fundamental limits of the high frequency response, since there is a transition from classical rectification to quantum effects when the FIR frequency exceeds the intrinsic time co
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Dynamics of Excitons in a CdSe-ZnSe Multiple Quantum Welllayer thickness. In these QWs, hot carriers have not only kinetic energy but also potential energy which varies following the in-plane bandgap fluctuations. Apart from hot-exciton formation and relaxation as in the intrinsic QW, hot carrier relaxation in these QWs also includes the localisation of e
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Low Temperature Anti-Stokes Luminescence in CdTe/(Cd,Mg)Te Quantum Well Structuressource, has been studied in a variety of systems, such as atoms and molecules., polymers. and amorphous semiconductors.. The main issue addressed in these studies was the identification of the underlying microscopic mechanisms as, e.g., multi-photon processes, Auger recombination or thermal excitati
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