Titlebook: High-Frequency GaN Electronic Devices; Patrick Fay,Debdeep Jena,Paul Maki Book 2020 Springer Nature Switzerland AG 2020 Gallium Nitride El

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Book 2020unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection ar

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Introduction and Overview,nsistors with much smaller and energy-efficient alternatives in data centers, miniature power adapters, and convertors, as well as making strides toward higher-power, high-voltage applications such as industrial and automotive motor control.

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Resonant Tunneling Transport in Polar III-Nitride Heterostructures,ctors. These advances allowed us to shed light into the physics of resonant tunneling transport in polar semiconductors which had remained hidden until now. This insight was obtained using a combined experimental and theoretical approach, leading to the discovery of new tunneling features, unique in