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Titlebook: Handbook of Advanced Plasma Processing Techniques; Randy J. Shul,Stephen J. Pearton Book 2000 Springer-Verlag Berlin Heidelberg 2000 Plasm

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41#
發(fā)表于 2025-3-28 15:29:23 | 只看該作者
Plasma Modeling,cs simulations, for example, routinely aid in the design of reactor geometry, pump ports, and inlet manifolds. Numerical heat transfer simulations provide guidance in the design of rapid-thermal process chambers and batch furnaces. For thermal chemical vapor deposition systems, chemistry modeling is
42#
發(fā)表于 2025-3-28 22:14:27 | 只看該作者
Plasma Reactor Modeling,s. The convergence of these two trends places unprecedented stringent demands on processes and equipments. The challenges faced by equipment manufacturers are enormous. Their dual role in the IC business involves design and development of new generation equipment and development and demonstration of
43#
發(fā)表于 2025-3-29 00:14:21 | 只看該作者
Overview of Plasma Diagnostic Techniques,n about the characteristics of a plasma. Plasmas used in microelectronics processing fall into the broad category of low temperature plasmas. Typical plasma characteristics include electron densities between 10. and 10. cm., electron temperatures from 0.1 to 10 eV, pressures of a few Torr to millito
44#
發(fā)表于 2025-3-29 05:42:40 | 只看該作者
45#
發(fā)表于 2025-3-29 09:40:50 | 只看該作者
46#
發(fā)表于 2025-3-29 11:59:07 | 只看該作者
47#
發(fā)表于 2025-3-29 16:33:14 | 只看該作者
Photomask Etching,ng become interesting to mask manufacturers. The reason for the late introduction of this technology becomes obvious when the methodologies used to image silicon wafers are examined. Contact printing, which uses a mercury arc lamp as a light source, satisfied the early needs of the industry when cri
48#
發(fā)表于 2025-3-29 23:29:23 | 只看該作者
49#
發(fā)表于 2025-3-30 01:14:33 | 只看該作者
Plasma Processing of III-V Materials,ication. A significant limitation of wet etching methods is that they lead to etch profiles with either isotropic or crystallographic characteristics. Many optoelectronic components such as ridge waveguides, semiconductor laser facets, distributed Bragg reflector gratings, and deeply etched via hole
50#
發(fā)表于 2025-3-30 06:50:09 | 只看該作者
Ion Beam Etching of Compound Semiconductors, requirements. Etched-facet diode lasers require extremely smooth vertical or precisely tilted facets. Blazed optical gratings use tenth-micrometer ridges etched at an angle. Ridge optical waveguide devices, such as modulators and switches, must be etched to a precise width and depth with a minimum
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