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Titlebook: Handbook of Advanced Plasma Processing Techniques; Randy J. Shul,Stephen J. Pearton Book 2000 Springer-Verlag Berlin Heidelberg 2000 Plasm

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發(fā)表于 2025-3-21 17:10:33 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書(shū)目名稱Handbook of Advanced Plasma Processing Techniques
編輯Randy J. Shul,Stephen J. Pearton
視頻videohttp://file.papertrans.cn/421/420783/420783.mp4
概述This volume brings together some of the most well-known scientists in each of the topics covered, many of whom have pioneered the development of plasma processing techniques.Includes supplementary mat
圖書(shū)封面Titlebook: Handbook of Advanced Plasma Processing Techniques;  Randy J. Shul,Stephen J. Pearton Book 2000 Springer-Verlag Berlin Heidelberg 2000 Plasm
描述Pattern transfer by dry etching and plasma-enhanced chemical vapor de- position are two of the cornerstone techniques for modern integrated cir- cuit fabrication. The success of these methods has also sparked interest in their application to other techniques, such as surface-micromachined sen- sors, read/write heads for data storage and magnetic random access memory (MRAM). The extremely complex chemistry and physics of plasmas and their interactions with the exposed surfaces of semiconductors and other materi- als is often overlooked at the manufacturing stage. In this case, the process is optimized by an informed "trial-and-error" approach which relies heavily on design-of-experiment techniques and the intuition of the process engineer. The need for regular cleaning of plasma reactors to remove built-up reaction or precursor gas products adds an extra degree of complexity because the interaction of the reactive species in the plasma with the reactor walls can also have a strong effect on the number of these species available for etching or deposition. Since the microelectronics industry depends on having high process yields at each step of the fabrication process, it is imperativ
出版日期Book 2000
關(guān)鍵詞Plasma; Sensor; Technologie; chemistry; collision; database; development; microelectromechanical system (ME
版次1
doihttps://doi.org/10.1007/978-3-642-56989-0
isbn_softcover978-3-642-63096-5
isbn_ebook978-3-642-56989-0
copyrightSpringer-Verlag Berlin Heidelberg 2000
The information of publication is updating

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,The Fat and Far … the Lean and Near,plasma characteristics include electron densities between 10. and 10. cm., electron temperatures from 0.1 to 10 eV, pressures of a few Torr to millitorr or below and excitation frequencies from dc to microwave. These parameters span a relatively wide range of conditions and make the selection of the best diagnostic tools challenging.
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地板
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Book 2000fabrication. The success of these methods has also sparked interest in their application to other techniques, such as surface-micromachined sen- sors, read/write heads for data storage and magnetic random access memory (MRAM). The extremely complex chemistry and physics of plasmas and their interact
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發(fā)表于 2025-3-22 12:25:49 | 只看該作者
Ensuring Financial Sustainability,rgy, flux, directionality, and chemistry of ions impinging upon the semiconductor surface. Dry-etching processes utilize a combination of physical and chemicaletch components to achieve high etch anisotropy and excellent dimensional control.
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發(fā)表于 2025-3-22 14:30:25 | 只看該作者
https://doi.org/10.1007/978-3-540-78504-0ing, a high etch rate and selectivity, and a nearly vertical profile are desired. For MMIC applications, via etch depths can be 50 to 100 μm. Due to the large etch depth, etch rates of several μm min. are desired for high throughput.
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Plasma Processing of III-V Materials,rgy, flux, directionality, and chemistry of ions impinging upon the semiconductor surface. Dry-etching processes utilize a combination of physical and chemicaletch components to achieve high etch anisotropy and excellent dimensional control.
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Device Damage During Low Temperature High-Density Plasma Chemical Vapor Deposition,tractive for improving conformbility of step coverage over high aspect-ratio features [.]. Moreover, a convenient process tool incorporates two chambers, one for etch and the other for deposition, joined by a central load-lock. This allows for sequential etch and deposition steps without the need to break vacuum.
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