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樓主
發(fā)表于 2025-3-21 19:56:39 | 只看該作者 |倒序瀏覽 |閱讀模式
書目名稱Growth of Crystals
編輯E. I. Givargizov,S. A. Grinberg
視頻videohttp://file.papertrans.cn/390/389134/389134.mp4
叢書名稱Growth of Crystals
圖書封面Titlebook: ;
出版日期Book 1993
版次1
doihttps://doi.org/10.1007/978-1-4615-2379-6
isbn_ebook978-1-4615-2379-6
The information of publication is updating

書目名稱Growth of Crystals影響因子(影響力)




書目名稱Growth of Crystals影響因子(影響力)學科排名




書目名稱Growth of Crystals網(wǎng)絡公開度




書目名稱Growth of Crystals網(wǎng)絡公開度學科排名




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書目名稱Growth of Crystals讀者反饋學科排名




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沙發(fā)
發(fā)表于 2025-3-21 22:28:46 | 只看該作者
Growth Surface as a Vacancy Generator in Vacuum Condensationt clearly evident during diffusional mass transfer occurring with the help of directional vacancy fluxes. In this instance, the transfer kinetics are determined by the presence and vigor of vacancy sources and sinks. It is known that structural defects of the crystals and mainly kinks in the surface
板凳
發(fā)表于 2025-3-22 02:43:53 | 只看該作者
Use of Photostimulated Vaporization During Growth of A2B5, A2B6, and A4B6 Filmsg irradiation by light with wavelengths in the range 0.25–1.2μ m increase several times compared with equivalent epitaxial processes and that the substrate surface is effectively cleaned and partially recrystallized before the growth.
地板
發(fā)表于 2025-3-22 05:25:51 | 只看該作者
Growth of Bulk Silicon Carbide Single Crystalsals by spontaneous crystallization from the vapor at 2550–2600 ? was reported. During these years, numerous attempts have been made to perfect the method by optimizing the thermal fields in the growth zone and controlling crystal nucleation by adding perforated graphite crystallization inserts and s
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發(fā)表于 2025-3-22 09:28:36 | 只看該作者
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發(fā)表于 2025-3-22 16:32:53 | 只看該作者
Local Shaping and Growth from the Melt of Intricate Sapphire Articles on “Crystallization Center” Equbstantially changed as the crystal is pulled from the melt since the base of the melt column caught between the crystallization front and the shaper reproduces the geometry of the shaper edge. The size of the transverse cross section can be changed only within narrow limits, usually less than fract
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發(fā)表于 2025-3-22 17:14:09 | 只看該作者
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發(fā)表于 2025-3-22 22:34:10 | 只看該作者
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發(fā)表于 2025-3-23 03:52:49 | 只看該作者
Flux Growth and Properties of Oxide Crystalss the most universal method and enables crystals to be prepared from compounds melting with decomposition, experiencing reconstructive phase transitions at extremely high temperatures, etc. Other methods of growing these crystals are not always feasible. Secondly, the flux method is most interesting
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發(fā)表于 2025-3-23 08:45:14 | 只看該作者
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