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書(shū)目名稱(chēng)Growth of Crystals影響因子(影響力)




書(shū)目名稱(chēng)Growth of Crystals影響因子(影響力)學(xué)科排名




書(shū)目名稱(chēng)Growth of Crystals網(wǎng)絡(luò)公開(kāi)度




書(shū)目名稱(chēng)Growth of Crystals網(wǎng)絡(luò)公開(kāi)度學(xué)科排名




書(shū)目名稱(chēng)Growth of Crystals被引頻次




書(shū)目名稱(chēng)Growth of Crystals被引頻次學(xué)科排名




書(shū)目名稱(chēng)Growth of Crystals年度引用




書(shū)目名稱(chēng)Growth of Crystals年度引用學(xué)科排名




書(shū)目名稱(chēng)Growth of Crystals讀者反饋




書(shū)目名稱(chēng)Growth of Crystals讀者反饋學(xué)科排名

背叛者

Growth Surface as a Vacancy Generator in Vacuum Condensationt clearly evident during diffusional mass transfer occurring with the help of directional vacancy fluxes. In this instance, the transfer kinetics are determined by the presence and vigor of vacancy sources and sinks. It is known that structural defects of the crystals and mainly kinks in the surface

表被動(dòng)

Use of Photostimulated Vaporization During Growth of A2B5, A2B6, and A4B6 Filmsg irradiation by light with wavelengths in the range 0.25–1.2μ m increase several times compared with equivalent epitaxial processes and that the substrate surface is effectively cleaned and partially recrystallized before the growth.

glacial

Growth of Bulk Silicon Carbide Single Crystalsals by spontaneous crystallization from the vapor at 2550–2600 ? was reported. During these years, numerous attempts have been made to perfect the method by optimizing the thermal fields in the growth zone and controlling crystal nucleation by adding perforated graphite crystallization inserts and s

形狀

Indent

Local Shaping and Growth from the Melt of Intricate Sapphire Articles on “Crystallization Center” Equbstantially changed as the crystal is pulled from the melt since the base of the melt column caught between the crystallization front and the shaper reproduces the geometry of the shaper edge. The size of the transverse cross section can be changed only within narrow limits, usually less than fract

Indent

FLAG

Keshan-disease

Flux Growth and Properties of Oxide Crystalss the most universal method and enables crystals to be prepared from compounds melting with decomposition, experiencing reconstructive phase transitions at extremely high temperatures, etc. Other methods of growing these crystals are not always feasible. Secondly, the flux method is most interesting

新手